KEC KTX301U Datasheet

SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

ᴌIncluding two(TR, Diode) devices in USV.

(Ultra Super Mini type with 5 leads)

ᴌSimplify circuit design.

ᴌReduce a quantity of parts and manufacturing process.

EQUIVALENT CIRCUIT (TOP VIEW)

54

Marking

Type Name

45

KTX301U

EPITAXIAL PLANAR PNP TRANSISTOR

SILICON EPITAXIAL PLANAR TYPE DIODE

B

B1

1

C

2

A

A1

C

3

H

G

5

D

4

T

DIM

A1

B1

A

B

C

D

G

H

T

MILLIMETERS

_
+

2.00 0.20
_

+

1.3 0.1
_

+

2.1 0.1
_

+

1.25 0.1

0.65

0.2+0.10/-0.05

0-0.1

_
+

0.9 0.1

0.15+0.1/-0.05

D1

1

Q1

23

12 3

MARK SPEC

Type

Mark CA CB

KTX301U KTX301U

Q1hFERank : Y Q1hFERank : GR

MAXIMUM RATINGS (Ta=25ᴱ)

TRANSISTOR Q

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Emitter Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

1

CHARACTERISTIC SYMBOL RATING UNIT

CA

1. D ANODE

1

2. Q EMITTER

1

3. Q BASE

1

4. Q COLLECTOR

1

5. D CATHODE

1

USV

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

T

j

T

stg

-50 V

-50 V

-5

-150

-30

100

150

-55~150

Ὠ

Ὠ

Ὠ

Ὥ

ᴱ

ᴱ

DIODE D

1

CHARACTERISTIC SYMBOL RATING UNIT

Maximum (Peak) Reverse Voltage

Reverse Voltage

Maximum (Peak) Forward Current

Average Forward Current

Surge Current (10mS)

Power Dissipation

Junction Temperature

Storage Temperature Range

2002. 1. 24 1/2

Revision No : 3

V

I

I

T

RM

V

FM

I

FSM

P

T

85 V

R

O

80 V

300

100

Ὠ

Ὠ

2 A

D

j

stg

-

150

-55ᴕ150

Ὥ

ᴱ

ᴱ

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

TRANSISTOR Q

1

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

KTX301U

h

FE

V

I

CBO

I

EBO

(Note)

CE(SAT)

f

T

C

ob

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Noise Figure NF

Note) hFEClassification Y(4):120~240, GR:200~400.

DIODE D

1

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

V

F(1)

Forward Voltage

Reverse Current

Total Capacitance

Reverse Recovery Time

V

F(2)

V

F(3)

I

R

C

T

t

rr

VCB=-50V, IE=0

VEB=-5V, IC=0

VCE=-6V, IC=-2Ὠ

IC=-100Ὠ, IB=-10Ὠ

VCE=-10V, IC=-1Ὠ

VCB=-10V, IE=0, f=1ὲ

VCE=-6V, IC=-0.1Ὠ, f=1ά, Rg=10ὶ

IF=1mA

IF=10mA

IF=100mA

VR=80V

VR=0, f=1ὲ

IF=10Ὠ

- - -0.1

- - -0.1

120 - 400

- -0.1 -0.3 V

80 - -

- 4 7

- 1.0 10 dB

- 0.60 -

- 0.72 -

- 0.90 1.20

- - 0.5

- 0.9 3.0

- 1.6 4.0

ὧ

ὧ

ὲ

ὸ

V

ὧ

ὸ

὜

2002. 1. 24 2/2

Revision No : 3