KEC KTX301E Datasheet

SEMICONDUCTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

ᴌIncluding two(TR, Diode) devices in TESV.

(Thin Extreme Super mini type with 5pin.)

ᴌSimplify circuit design.

ᴌReduce a quantity of parts and manufacturing process.

EQUIVALENT CIRCUIT (TOP VIEW)

54

D1

Q1

Marking

Type Name

C

23

1

123

45

h Rank

FE

KTX301E

EPITAXIAL PLANAR PNP TRANSISTOR

SILICON EPITAXIAL PLANAR TYPE DIODE

B

B1

C

A

A1

C

H

1. D ANODE

2. Q EMITTER

3. Q BASE

4. Q COLLECTOR

5. D CATHODE

1

2

3

P

1

1

1

1

1

5

DIM MILLIMETERS

A

A1

B

B1

D

4

P

C

D

H

P5

J

_

1.6 0.05

+
_

+

1.0 0.05
_

+

1.6 0.05
_

+

1.2 0.05

0.50
_

+

0.2 0.05
_

+

0.5 0.05

_

J

+

0.12 0.05

MARK SPEC

Type

Mark CA CB

KTX301E KTX301E

Q1hFERank : Y Q1hFERank : GR

MAXIMUM RATINGS (Ta=25ᴱ)

TRANSISTOR Q

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

DIODE D

Maximum (Peak) Reverse Voltage

Reverse Voltage

Maximum (Peak) Forward Current

Average Forward Current

Surge Current (10mS)

Power Dissipation

Junction Temperature

Storage Temperature Range

1

CHARACTERISTIC SYMBOL RATING UNIT

1

CHARACTERISTIC SYMBOL RATING UNIT

V

V

V

T

V

I

I

T

CBO

CEO

EBO

I

I

P

T

RM

V

FM

I

FSM

P

T

TESV

-50 V

-50 V

-5 V

C

B

C

j

stg

-150

-30

100

150

-55~150

85 V

R

80 V

300

O

100

2 A

D

j

stg

-

150

-55ᴕ150

Ὠ

Ὠ

Ὥ

ᴱ

ᴱ

Ὠ

Ὠ

Ὥ

ᴱ

ᴱ

2002. 1. 24 1/2

Revision No : 1

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

TRANSISTOR Q

1

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

KTX301E

h

FE

V

I

CBO

I

EBO

(Note)

CE(SAT)

f

T

C

ob

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Noise Figure NF

Note) hFEClassification Y(4):120~240, GR:200~400.

DIODE D

1

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

V

F(1)

Forward Voltage

Reverse Current

Total Capacitance

Reverse Recovery Time

V

F(2)

V

F(3)

I

R

C

T

t

rr

VCB=-50V, IE=0

VEB=-5V, IC=0

VCE=-6V, IC=-2Ὠ

IC=-100Ὠ, IB=-10Ὠ

VCE=-10V, IC=-1Ὠ

VCB=-10V, IE=0, f=1ὲ

VCE=-6V, IC=-0.1Ὠ, f=1ά, Rg=10ὶ

IF=1mA

IF=10mA

IF=100mA

VR=80V

VR=0, f=1ὲ

IF=10Ὠ

- - -0.1

- - -0.1

120 - 400

- -0.1 -0.3 V

80 - -

- 4 7

- 1.0 10 dB

- 0.60 -

- 0.72 -

- 0.90 1.20

- - 0.5

- 0.9 3.0

- 1.6 4.0

ὧ

ὧ

ὲ

ὸ

V

ὧ

ὸ

὜

2002. 1. 24 2/2

Revision No : 1