KEC KTK5164S Datasheet

2002. 10. 17 1/3

SEMICONDUCTOR

TECHNICAL DATA

KTK5164S

Revision No : 1

ULTRA-HIGH SPEED SWITCHING APPLICATIONS

ANALOG SWITCH APPLICATIONS

FEATURES

2.5 Gate Drive.

Low Threshold Voltage : Vth=0.5 1.5V.

High Speed.

Small Package.

Enhancement-Mode.

MAXIMUM RATINGS (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

EQUIVALENT CIRCUIT

CHARACTERISTIC SYMBOL RATING UNIT

Drain-Source Voltage

V

DS

60 V

Gate-Source Voltage

V

GSS

20

V

DC Drain Current

I

D

200 mA

Drain Power Dissipation

P

D

200 mW

Channel Temperature

T

ch

150

Storage Temperature Range

T

stg

-55 150

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Gate Leakage Current

I

GSS

VGS= 16V, VDS=0V

- -

1 A

Drain-Source Breakdown Voltage

V

(BR)DSS

ID=100 A, VGS=0V

60 - - V

Drain Cut-off Current

I

DSS

VDS=60V, VGS=0V

- - 1

A

Gate Threshold Voltage

V

th

VDS=10V, ID=1mA

0.5 - 1.5 V

Forward Transfer Admittance

|Yfs| VDS=10V, ID=50mA

100 - - mS

Drain-Source ON Resistance

R

DS(ON)

ID=50mA, VGS=2.5V

- 1.5 2

Input Capacitance

C

iss

VDS=10V, VGS=0V, f=1MHz

- 55 65 pF

Reverse Transfer Capacitance

C

rss

VDS=10V, VGS=0V, f=1MHz

- 13 18 pF

Output Capacitance

C

oss

VDS=10V, VGS=0V, f=1MHz

- 40 50 pF

Switching Time

Rise Time

t

r

- 8 -

nS

Turn-on Time

t

on

- 14 -

Fall Time

t

f

- 35 -

Turn-off Time

t

off

- 75 -

E

B

LL

DIM

MILLIMETERS

_

A

B

C

A

G

2

H

1

PP

N

C

K

1. SOURCE

2. GATE

3. DRAIN

D

3

M

D

E

G

H

J

K

L

M

N

J

P

SOT-23

+

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

7

G

D

S

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION.

Marking

Lot No.

Type Name

10V

0

V

IN

10µs

V :t , t < 5ns

r

IN

f

< =

(Z =50Ω)

D.U. 1%

50Ω

OUT

I =100mA

D

V = 30V

R

DD

V

OUT

L

KM

2002. 10. 17 2/3

KTK5164S

Revision No : 1

200

2.2V

160

D

120

80

40

DRAIN CURRENT I (mA)

0

0

48 2012 16

DRAIN-SOURCE VOLTAGE V (V)

1K

COMMON SOURCE V =10V

DS

Ta=25 C

100

fs

Y (mS)

I - V

DDS

COMMON SOURCE

Ta=25 C

2.0V

Y - I

fs D

V =1.4V

GS

DS

1.8V

1.6V

(LOW VOLTAGE REGION)

200

2.2V

160

D

120

80

40

DRAIN CURRENT I (mA)

0

0

0.4

GATE-SOURCE VOLTAGE V (V)

100

D

10

1

I - V

DSD

COMMON SOURCE Ta=25 C

2.0V

1.8V

1.6V

V =1.4V

GS

0.8 1.2 1.6 2.0

DS

I - V

DGS

COMMON SOURCE V =10V

DS

Ta=25 C

10

FORWARD TRANSFER ADMITTANCE

1

10 100

DRAIN CURRENT I (mA)

C - V

DS

500

300

100

50

30

10

CAPACITANCE C (pF)

5 3

0.1 0.3 0.5 13510 5030

DRAIN-SOURCE VOLTAGE V (V)

D

COMMON SOURCE

V =0

GS

f=1MHz Ta=25 C

C

iss

C

oss

C

rss

DS

DRAIN CURRENT I (mA)

0.1

12345

300

DS(ON)

100

GATE-SOURCE VOTAGE V (V)

V - I

DS(ON) D

COMMON SOURCE V =0

GS

f=1MHz

Ta=25 C

GS

50

30

10

5

DRAIN-SOURCE ON VOLTAGE V (mV)

DRAIN CURRENT I (mA)

D

30010 30 50 100

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