KEC KTK5162S Datasheet
SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
EATURES
ᴌ2.5 Gate Drive.
ᴌLow Threshold Voltage : V
ᴌHigh Speed.
ᴌSmall Package.
ᴌEnhancement-Mode.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
=0.5ᴕ1.5V.
th
V
V
DS
GSS
I
D
P
D
T
ch
T
stg
60 V
ᴦ20
100 mA
200 mW
150
-55ᴕ150
ᴱ
ᴱ
KTK5162S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
B
LL
DIM
MILLIMETERS
_
A
B
C
A
G
V
2
H
1
PP
N
C
K
1. SOURCE
2. GATE
3. DRAIN
D
3
M
D
E
G
H
J
K
L
M
N
J
P
SOT-23
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
EQUIVALENT CIRCUIT
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-on Time
Switching Time
Turn-off Time
I
GSS
V
(BR)DSS
I
DSS
V
|Yfs| VDS=10V, ID=50mA
R
DS(ON)
C
iss
C
rss
C
oss
t
on
t
off
Marking
Lot No.
Type Name
VGS=ᴦ16V, VDS=0V
ID=100ỌA, VGS=0V
VDS=60V, VGS=0V
th
VDS=3V, ID=0.1mA
ID=10mA, VGS=2.5V
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDD=25V, ID=50mA, VGS=0ᴕ2.5V
KF
- -
60 - - V
- - 1
0.5 - 1.5 V
85 120 - mS
- 22 40
- 6.2 - pF
- 1.5 - pF
- 4.4 - pF
- 10 - nS
- 105 - nS
ᴦ1 ỌA
ỌA
ή
2001. 10. 29 1/3
Revision No : 0
KTK5162S
I - V
DDS
0.10
COMMON SOURCE
Ta=25 C
10V
0.08
D
8.0V
0.06
0.04
0.02
DRAIN CURRENT I (A)
0
0
0.2
0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE V (V)
Y - I
fs D
1
COMMON SOURCE
V =3V
DS
0.5
0.3
Ta=25
Ta=-
C
25 C
fs
Y (S)
0.1
0.05
0.03
FORWARD TRANSFER ADMITTANCE
0.01
0.03 0.05 0.1 0.3
DRAIN CURRENT I (A)
6.0V
Ta=75
D
4.
C
V
0
V =2.0V
GS
DS
3.
2.5V
0V
I - V
GSD
(LOW VOLTAGE REGION)
0.20
COMMON SOURCE
0.18
V =10V
SD
0.16
D
0.14
0.12
0.10
0.08
Ta=-
C
25
25 C
Ta=
0.06
0.04
DRAIN CURRENT I (A)
0.02
0
0
1
2345
DRAIN-SOURCE VOLTAGE V (V)
I - V
FSD
0.3
COMMON SOURCE
V =0
GS
F
0.1
0.05
Ta=75
C
C
C
5
25
Ta=
Ta=-2
0.03
FORWARD CURRENT I (A)
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
DIODE FORWARD VOTAGE V (V)
=75 C
Ta
GS
SD
C - V
30
10
5
3
DS
COMMON SOURCE
V =0
GS
f=1MHz
Ta=25 C
C
iss
oss
C
50
30
DS(ON)
R (Ω)
COMMON SOURCE
V =2.5V
GS
Ta=25 C
R - I
DS(ON) D
10
CAPACITANCE C (pF)
1
0.5
50 101520253035404550
DRAIN-SOURCE VOLTAGE V (V)
2001. 10. 29 2/3
Revision No : 0
C
rss
5
DS
DRAIN SOURCE ON-STATE RESISTANCE
DRAIN CURRENT I (mA)
D
3010.3 0.5 3 5 10
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