KEC KTK5134S Datasheet
SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
ᴌ2.5 Gate Drive.
ᴌLow Threshold Voltage : V
ᴌHigh Speed.
ᴌSmall Package.
ᴌEnhancement-Mode.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
=0.5ᴕ1.5V.
th
V
V
DS
GSS
I
D
P
D
T
ch
T
stg
30 V
ᴦ20
200 mA
200 mW
150
-55ᴕ150
ᴱ
ᴱ
KTK5134S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
B
LL
DIM
MILLIMETERS
_
A
B
C
A
G
V
2
H
1
PP
N
C
K
1. SOURCE
2. GATE
3. DRAIN
D
3
M
D
E
G
H
J
K
L
M
N
J
P
SOT-23
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
EQUIVALENT CIRCUIT
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-on Time
Switching Time
Turn-off Time
I
GSS
V
(BR)DSS
I
DSS
V
|Yfs| VDS=3V, ID=50mA
R
DS(ON)
C
iss
C
rss
C
oss
t
on
t
off
Marking
Lot No.
Type Name
VGS=ᴦ16V, VDS=0V
ID=100ỌA, VGS=0V
VDS=30V, VGS=0V
th
VDS=3V, ID=0.1mA
ID=50mA, VGS=2.5V
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDD=3V, ID=10mA, VGS=0ᴕ2.5V
KD
- -
30 - - V
- - 1
0.5 - 1.5 V
100 - - mS
- 1.2 2
- 70 - pF
- 23 - pF
- 58 - pF
- 60 - nS
- 120 - nS
ᴦ1 ỌA
ỌA
ή
2001. 10. 29 1/3
Revision No : 0
KTK5134S
I - V
DDS
0.2
2.5V
1.9V
D
0.1
1.8V
1.7V
1.6V
DRAIN CURRENT I (A)
0
0
2
46810
DRAIN-SOURCE VOLTAGE V (V)
I - V
1
0.5
DR
0.3
0.1
0.05
0.03
DRAIN REVERSE CURRENT I (A)
0.01
COMMON
SOURCE
V =0
GS
Ta=25 C
D
G
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
I
DR
S
COMMON SOURCE
Ta=25 C
1.5V
V =1.4V
GS
DS
DSDR
(LOW VOLTAGE REGION)
0.2
D
2.5V
0.1
DRAIN CURRENT I (A)
0
0
0.4
DRAIN-SOURCE VOLTAGE V (V)
1K
300
100
D
30
10
3
C
0
10
=
Ta
Ta=-25 C
1
DRAIN CURRENT I (mA)
0.3
0.1
0
1
I - V
1.9V
DSD
COMMON
SOURCE
Ta=25 C
1.8V
1.7V
1.6V
1.5V
V =1.4V
GS
0.8 1.2 1.6 2.0
DS
I - V
Ta=25 C
GSD
COMMON
SOURCE
V =3V
DS
2345
DRAIN-SOURCE VOTAGE V (V)
Y - I
fs D
1K
COMMON SOURCE
V =3V
DS
Ta=25 C
500
300
fs
Y (mS)
100
FORWARD TRANSFER ADMITTANCE
10 30 50 100 300 500
DRAIN CURRENT I (mA)
2001. 10. 29 2/3
Revision No : 0
DS
300
100
50
30
CAPACITANCE C (pF)
10
5
D
GATE-SOURCE VOTAGE V (V)
COMMON EMITTER
V =0
GS
f=1MHz
Ta=25 C
C - V
DS
DRAIN-SOURCE VOLTAGE V (V)
GS
DS
C
iss
C
oss
C
rss
301.00.30.1 0.5 3.0 5.0 10
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