KEC KTK5133S Datasheet
SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
ᴌ2.5 Gate Drive.
ᴌLow Threshold Voltage : V
ᴌHigh Speed.
ᴌSmall Package.
ᴌEnhancement-Mode.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
=0.5ᴕ1.5V.
th
V
V
DS
GSS
I
D
P
D
T
ch
T
stg
30 V
ᴦ20
150 mA
200 mW
150
-55ᴕ150
ᴱ
ᴱ
KTK5133S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
B
LL
DIM
MILLIMETERS
_
A
B
C
A
G
V
2
H
1
PP
N
C
K
1. SOURCE
2. GATE
3. DRAIN
D
3
M
D
E
G
H
J
K
L
M
N
J
P
SOT-23
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
EQUIVALENT CIRCUIT
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-on Time
Switching Time
Turn-off Time
I
GSS
V
(BR)DSS
I
DSS
V
|Yfs| VDS=10V, ID=80mA
R
DS(ON)
C
iss
C
rss
C
oss
t
on
t
off
Marking
Lot No.
Type Name
VGS=ᴦ16V, VDS=0V
ID=100ỌA, VGS=0V
VDS=30V, VGS=0V
th
VDS=3V, ID=0.1mA
ID=40mA, VGS=2.5V
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDD=15V, ID=80mA, VGS=0ᴕ4V
KC
- -
30 - - V
- - 1
0.5 - 1.5 V
100 - - mS
- 3.7 5.2
- 7.0 - pF
- 2.3 - pF
- 5.9 - pF
- 84 - nS
- 275 - nS
ᴦ1 ỌA
ỌA
ή
2001. 10. 29 1/3
Revision No : 0
KTK5133S
0.16
3.5V
0.12
D
0.08
4.0V
6.0V
0.04
DRAIN CURRENT I (A)
0
0
0.2
DRAIN-SOURCE VOLTAGE V (V)
0.30
V =10V
DS
0.25
D
0.20
0.15
0.10
0.05
DRAIN CURRENT I (A)
I - V
DDS
3.0V
2.5V
2.0V
V =1.5V
GS
0.4 0.6 0.8 1.0
DS
I - V
Ta=-25
GSD
C
Ta=25 C
C
=75
a
T
0.3
V =0
GS
F
0.1
0.05
0.03
a=75 C
T
FORWARD CURRENT I (A)
0.01
0.70.5 0.6 1.00.8 0.9 1.1 1.2
DIODE FORWARD VOLTAGE V (V)
1
V =10V
DS
0.5
0.3
0.1
fs
Y (S)
0.05
Ta=-25 C
Ta=25 C
0.03
I - V
5 C
2
Ta=
Y - I
fs D
75
=
a
T
SDF
C
Ta=-25
SD
C
0
0.5
0
GATE-SOURCE VOTAGE V (V)
500
300
100
50
30
CAPACITANCE C (pF)
10
0
2 4 6 8 10 12 14 16 18 20
DRAIN-SOURCE VOLTAGE V (V)
1.0 1.5 2.0 2.5
GS
C - V
DS
f=1MHz
C
iss
C
oss
C
rss
DS
3.0
0.01
FORWARD TRANSFER ADMITTANCE
0.030.01
DRAIN CURRENT I (A)
R (on) - I
DS D
10
5
DS
3
RESISTANCE R (on) (Ω)
STATIC DRAIN-SOURCE ON-STATE
1
V =2.5V
DS
Ta=75 C
Ta=25 C
Ta=-25 C
0.01 0.03 0.05 0.1 0.3 0.5
DRAIN CURRENT I (A)
0.10.05 0.50.3
D
D
2001. 10. 29 2/3
Revision No : 0
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