KEC KTK5131S Datasheet
SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
ᴌ2.5 Gate Drive.
ᴌLow Threshold Voltage : V
ᴌHigh Speed.
ᴌSmall Package.
ᴌEnhancement-Mode.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
=0.5ᴕ1.5V.
th
V
V
T
T
I
P
DS
GSS
D
D
ch
stg
30 V
ᴦ20
50 mA
200 mW
150
-55ᴕ150
ᴱ
ᴱ
KTK5131S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
B
LL
DIM
MILLIMETERS
_
A
B
C
A
G
V
2
H
1
PP
N
C
K
1. SOURCE
2. GATE
3. DRAIN
D
3
M
D
E
G
H
J
K
L
M
N
J
P
SOT-23
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
EQUIVALENT CIRCUIT
D
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching
Time
Turn-on Time
Turn-off Time
I
GSS
V
(BR)DSS
I
DSS
V
th
|Yfs| VDS=3V, ID=10mA
R
DS(ON)
C
iss
C
rss
C
oss
t
on
t
off
VGS=ᴦ16V, VDS=0V
ID=100ỌA, VGS=0V
VDS=30V, VGS=0V
VDS=3V, ID=0.1mA
ID=10mA, VGS=2.5V
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDD=3V, ID=10mA, VGS=0ᴕ2.5V
Marking
Type Name
Lot No.
KA
- -
30 - - V
- - 1
0.5 - 1.5 V
20 - - mS
- 15 40
- 5.5 - pF
- 1.6 - pF
- 6.5 - pF
- 140 - nS
- 140 - nS
ᴦ1 ỌA
ỌA
ή
2001. 10. 23 1/3
Revision No : 0
KTK5131S
60
2.5
50
D
40
30
2.2
2.0
1.8
20
10
DRAIN CURRENT I (mA)
0
0
4681012
2
DRAIN-SOURCE VOLTAGE V (V)
50
30
DR
10
3
I - V
DDS
COMMON SOURCE
Ta=25 C
1.6
I - V
DSDR
COMMON SOURCE
V =0
Ta=25 C
I - V
DSD
(LOW VOLTAGE REGION)
1.4
V =1.2V
GS
DS
1.2
2.5
1.0
D
0.8
1.2
0.6
0.4
0.2
DRAIN CURRENT I (mA)
0
0
0.2 0.3 0.4 0.5 0.6
0.1
DRAIN-SOURCE VOLTAGE V (V)
1.1
I - V
D
COMMON SOURCE
Ta=25 C
1.05
1.0
V =0.95V
GS
0.9
0.8
DS
GS
50
30
GS
10
D
Ta=100 C
3
COMMON SOURCE
V =3V
GS
1
0.3
0.1
0.03
0.01
DRAIN REVERSE CURRENT I (mA)
0
-0.4 -0.8 -1.2 -1.6
DRAIN-SOURCE VOTAGE V (V)
Y - I
fs D
100
COMMON
SOURCE
V =3V
50
DS
Ta=25 C
30
fs
Y (mS)
10
5
D
G
I
DR
S
1
0.3
0.1
DRAIN CURRENT I (mA)
0.03
Ta=25 C
Ta=-25 C
0.01
1
GATE-SOURCE VOTAGE V (V)
2345
GS
C - V
DS
COMMON SOURCE
V =0
GS
f=1MHz
Ta=25 C
C
iss
oss
C
C
rss
DS
0
30
10
5
3
CAPACITANCE C (pF)
1
3
FORWARD TRANSFER ADMITTANCE
2001. 10. 23 2/3
1
3 5 10 30 50 100
DRAIN CURRENT I (mA)
D
Revision No : 0
0.5
DRAIN-SOURCE VOLTAGE V (V)
DS
20100.3100m 0.5 1 3 5
Loading...