KEC KTK5131E Datasheet
SEMICONDUCT
KTK5131E
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
·2.5 Gate Drive.
·Low Threshold Voltage : Vth=0.5～1.5V.
·High Speed.
·Small Package.
·Enhancement-Mode.
MAXIMUM RATING (Ta=25℃)
1
3
2
E
B
D
A
G
H
C
J
1. SOURCE
2. GATE
3. DRAIN
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Marking
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
D
G
S
EQUIVALENT CIRCUIT
TECHNICAL DATA
CHARACTERISTIC SYMBOL RATING UNIT
OR
MILLIMETERS
DIM
1.60 0.10
A
0.85 0.10
B
0.70 0.10
C
0.27+0.10/-0.05
D
1.60 0.10
E
1.00 0.10
G
0.50
H
0.13 0.05
J
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
30 V
±20
50 mA
100 mW
150
-55～150
℃
℃
V
ESM
Type Name
K A
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching
Time
2002. 6. 17 1/3
Turn-on Time
Turn-off Time
I
GSS
V
(BR)DSS
I
DSS
V
th
|Yfs| VDS=3V, ID=10mA
R
DS(ON)
C
iss
C
rss
C
oss
t
on
t
off
VGS=±16V, VDS=0V
ID=100μA, VGS=0V
VDS=30V, VGS=0V
VDS=3V, ID=0.1mA
ID=10mA, VGS=2.5V
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDS=3V, VGS=0V, f=1MHz
VDD=3V, ID=10mA, VGS=0～2.5V
- -
±1 μA
30 - - V
- - 1
0.5 - 1.5 V
20 - - mS
- 15 40
- 5.5 - pF
- 1.6 - pF
- 6.5 - pF
- 140 - nS
- 140 - nS
μA
Ω
KTK5131E
DR
DRAIN REVERSE CURRENT I (mA)
DRAIN-SOURCE VOTAGE V (V)
DS
DSDR
I - V
DRAIN-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (mA)
D
0
DS
0
I - V
DDS
DRAIN CURRENT I (mA)
FORWARD TRANSFER ADMITTANCE
1
3
D
Y - I
DRAIN-SOURCE VOLTAGE V (V)
DRAIN CURRENT I (mA)
D
DS
(LOW VOLTAGE REGION)
2
COMMON SOURCE
Ta=25 C
V =1.2V
GS
0.2
0
0
0.1
Ta=25 C
COMMON SOURCE
V =0.95V
GS
fs D
35 10 30 50 100
5
10
30
50
100
COMMON
SOURCE
V =3V
DS
4681012
10
20
30
40
50
60
1.4
1.6
1.8
2.0
2.2
2.5
0.20.3 0.40.5 0.6
0.4
0.6
0.8
1.0
1.2
I - V
DSD
D
I
S
G
DR
DRAIN CURRENT I (mA)
GATE-SOURCE VOTAGE V (V)
GS
1
0.01
0
0.03
0.3
0.1
1
3
Ta=-25 C
COMMON SOURCE
D
50
30
10
I - V
D
V =3V
GS
GS
2345
Ta=100 C
2.5
1.2
1.1
1.05
1.0
0.9
0.8
50
30
10
3
1
0.3
0.1
0.03
0.01
0
-0.4 -0.8 -1.2 -1.6
COMMON SOURCE
V =0
GS
Ta=25 C
Ta=25 C
Ta=25 C
fs
Y (mS)
30
10
5
3
CAPACITANCE C (pF)
1
C - V
DS
COMMON SOURCE
V =0
GS
f=1MHz
Ta=25 C
0.5
DRAIN-SOURCE VOLTAGE V (V)
DS
2002. 6. 17 2/3
Revision No : 0
C
iss
oss
C
C
rss
20100.3100m 0.51 35
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