KEC KTK161 Datasheet
SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
ᴌLow Noise Figure.
: NF=2.5dB(Typ.) (f=100MHz).
ᴌHigh Forward Transfer Admittance.
:|y
|= 9mS(Typ.).
fs
ᴌExtremely Low Reverse Transfer Capacitance.
: C
=0.1pF(Typ.)
rss
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Gate-Drain Voltage
Gate-Current
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
V
GDO
I
G
P
D
T
j
T
stg
-18 V
10 mA
400 mW
150
-55ᴕ150
ᴱ
ᴱ
KTK161
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
B
A
F
H
C
J
1
L
EE
2
3
N
M
K
1. DRAIN
2. SOURCE
3. GATE
G
D
TO-92M
O
DIM
MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40 0.15
E
F
G
14.00 0.50
H
0.60 MAX
J
K
L
M
0.55 MAX
N
O 0.75
1.27
2.30
1.05
1.45
25
0.80
_
+
_
+
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
Gate-Drain Breakdown Voltage
Drain Current
Gate-Source Cut-off Voltage
Foward Transfer Admittance
Reverse Transfer Capacitance
Power Gain
Noise Figure NF
Note : I
Classification O:1.0ᴕ3.0, Y:2.5ᴕ6.0, GR:5.0ᴕ10.0, BL:9.0ᴕ15.0
DSS
I
GSS
V
(BR)GDO
I
(Note) VDS=10V, VGS=0V
DSS
V
GS(OFF)
|yfs| VDS=10V, VGS=0, f=1kHz
C
rss
G
ps
VGS=-0.5V, VDS=0
IG=-100ỌA
VDS=10V, ID=1ỌA
VGD=-10V, f=1MHz
VDD=10V, f=100MHz (Fig.)
VDD=10V, f=100MHz (Fig.)
- - -10 nA
-18 - - V
1.0 - 15.0 mA
-0.4 - -4.0 V
- 9.0 - mS
- 0.10 0.15 pF
- 18 - dB
- 2.5 3.5 dB
1995. 1. 24 1/3
Revision No : 0
Fig. 100MHz GPS, NF TEST CIRCUIT
KTK161
INPUT
R =50Ω
g
10pF
20pF
L1 : 0.8mmΦ Ag PLATED Cu WIRE , 3 TURNS , 10mm ID , 10mm LENGTH.
L1 : 0.8mmΦ Ag PLATED Cu WIRE , 3.5 TURNS , 10mm ID , 10mm LENGTH.
KTK161 is measured at each group by changing RS.
L1
G
0.005µF
RS
V
10pF
0.005µF
DD
D
S
20pF
L2
OUTPUT
R =50Ω
L
Group
KTK161-O 0
KTK161-Y
KTK161-GR
KTK161-BL
RS(ή)
18ήᴦ5%
100ήᴦ5%
200ήᴦ5%
1995. 1. 24 2/3
Revision No : 0
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