2002. 6. 17 1/2
SEMICONDUCT
OR
TECHNICAL DATA
KTH2369/A
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH SPEED SWITCHING APPLICATION.
FEATURES
·High Frequency Characteristics
: fT=500MHz(Min.) (VCE=10V, f=100MHz, IC=10mA).
·Excellent Switching Characteristics.
MAXIMUM RATING (Ta=25℃)
TO-92
DIMMILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
AJ
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : *Pulse Test : Pulse Width≦300μS, Duty Cycle≦2.0%
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
15 V
Emitter-Base Voltage
V
EBO
4.5 V
Collector Current
I
C
500 mA
Collector Power Dissipation (Ta=25℃)
P
C
625 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55~150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=20V, IE=0
- - 0.4
μA
VCB=20V, IE=0, Ta=125℃
- - 30
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10μA, IE=0
40 - -
VCollector-Emitter Breakdown Voltage *
V
(BR)CEOIE
=10mA, IB=0
15 - -
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10μA, IC=0
4.5 - -
DC Current *
Gain
KTH2369/A
h
FE
IC=10mA, VCE=1.0V
40 - 120
KTH2369
IC=10mA, VCE=1.0V, Ta=-55℃
20 - -
KTH2369A
IC=10mA, VCE=0.35V, Ta=-55℃
20 - -
KTH2369
IC=100mA, VCE=2.0V
20 - -
KTH2369A
IC=100mA, VCE=1.0V
20 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
IC=10mA, IB=1.0mA
- - 0.25 V
Base-Emitter Saturation Voltage *
V
BE(sat)
IC=10mA, IB=1.0mA
0.70 - 0.85 V
Transition Frequency
f
T
IC=10mA, VCE=10V, f=100MHz
500 - - MHz
Collector Output Capacitance
C
ob
VCB=5.0V, IE=0, f=1.0MHz
- - 4.0 pF
Storage Time
t
stg
IC=100mA, IB1=-IB2=10mA, VCC=10V
- - 13
nS
Turn-on Time
t
on
VCC=3.0V, IC=10mA,
IB1=3.0mA, IB2=-1.5mA
- - 12
Turn-off Time
t
off
IC=10mA, IB1=3.0mA
IB2=-1.5mA, VCC=3.0V
- - 15
2002. 6. 17 2/2
KTH2369/A
Revision No : 2
COLLECTOR CURRENT I (mA)
C
BASE-EMITTER VOLTAGE V (V)
BE
BEC
I - V
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA)
C
V - I
CE(sat)C
COLLECTOR CURRENT I (mA)
BASE-EMITTER SATURATION
C
V - I
VOLTAGE V (V)
BE(sat)
BE(sat)C
0.1
0
0.01 1
CE
V =1V
10 100
COLLECTOR CURRENT I (mA)
C
h - I
FE C
DC CURRENT GAIN h
FE
50
100
150
200
VOLTAGE V (V)
CE(sat)
I /I =10
0.3
0.10.3 1310 30
Ta
=-
4
0
C
C
B
300100
COMMON EMITTER
Ta=-40 C
Ta=25 C
Ta=125 C
Ta=125 C
0
0.10.3 1310 30 300100
COMMON EMITTER
I /I =10
CB
0.1
0.2
0.3
0.4
0.5
Ta=-40 C
Ta=25 C
0.5
0.7
0.9
1.1
1.3
1.5
Ta
=25
C
Ta
=12
5
C
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C
C
P - Ta
COLLECTOR OUTPUT CAPACITANCE C
0
50100.1
COLLECTOR-BASE VOLTAGE V (V)
CB
C - V , C - V
ob CB
1.03.0
COMMON
C
ibo
f=1MHz
P (W)
25
100
200
300
400
500
600
700
0.330
1.0
2.0
3.0
4.0
5.0
Ta=25 C
obo
C
EMITTER
COLLECTOR INPUT CAPACITANCE C
ob(pF)
ib(pF)
EMITTER-BASE VOLTAGE V (V)
EB
ib EB
0.1
0
0.3
COMMON EMITTER
V =1V
CE
Ta=125
C
0.20.4 0.60.8 1.0
0.5
1
3
5
10
30
Ta
=
2
5
C
Ta=
-40
C