KEC KTD2854 Datasheet
SEMICONDUCTOR
KTD2854
TECHNICAL DATA
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATION.
FEATURES
ᴌ
High DC Current Gain
=2000(Min.) (VCE=2V, IC=1A)
: h
FE
ᴌLow Saturation Voltage
: V
ᴌComplementary to KTB2234.
MAXIMUM RATINGS (Ta=25ᴱ)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
=1.5V(Max.) (IC=1A, IB=1mA)
CE(sat)
CHARACTERISTIC SYMBOL RATING UNIT
DC
Pulse
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
100 V
100 V
8 V
2
3
0.5 A
1 W
150
-55ᴕ150
A
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
B
P
DEPTH:0.2
C
Q
FF
HH
M
123
O
K
E
NN
1. EMITTER
2. COLLECTOR
3. BASE
G
M
D
A
J
R
D
L
H
DIM MILLIMETERS
A
B
C
S
D
E
F
G
H
J
K
H
L
M
N
O
P
Q
TO-92L
EQUIVALENT CIRCUIT
COLLECTOR
BASE
∼
4kΩ
−
∼
−
800Ω
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
+
14.00 0.50
0.35 MIN
_
+
0.75 0.10
4
25
1.25
Φ1.50
0.10 MAX
_
+
12.50 0.50R
1.00S
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn On Time
Switching
Time
Storage Time
Fall Time
I
I
V
(BR)CEO
h
V
CE(sat)
V
BE(sat)
C
CBO
EBO
FE
f
T
ob
t
on
t
stg
t
f
VCB=80V, IE=0
VEB=8V, IC=0
IC=10mA, IB=0
VCE=2V, IC=1A(Pulse)
IC=1A, IB=1mA(Pulse)
IC=1A, IB=1mA(Pulse)
VCE=2V, IC=0.5A
VCB=10V, IE=0, f=1MHz
20µs
I
B1
I =-I =1mA
B2
B1
DUTY CYCLE
INPUT
I
B2
<
1%
=
I
B1
I
B2
OUTPUT
30Ω
V =30V
CC
EMITTER
- - 10
- - 4 mA
100 - - V
2000 - -
- - 1.5 V
- - 2.0 V
- 100 - MHz
- 20 - pF
- 0.4 -
- 4.0 -
- 0.6 -
ỌA
ỌS
2001. 10. 23 1/3
Revision No : 0
KTD2854
I - V
4
C
3
2
1
COLLECTOR CURRENT I (A)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
3
COMMON EMITTER
I /I =1000
C B
3mA
2mA
12345
V - I
CE(sat) C
CE
C
1mA
COMMON EMITTER
Ta=25 C
700µA
I =200µA
B
CE
0µA
50
400µA
0µA
30
10K
FE
3K
1K
300
100
DC CURRENT GAIN h
30
10
10m 30m
COLLECTOR CURRENT I (A)
5
3
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-55
C
COMMON EMITTER
V =2V
CE
100m 300m 1 3 10
C
V - I
BE(sat) C
COMMON EMITTER
I /I =1000
CB
CE(sat)
55
1
VOLTAGE V (V)
0.5
COLLECTOR-EMITTER SATURATION
0.2 0.3 3 51 0.5
Ta=25 C
Ta=-
Ta=100 C
COLLECTOR CURRENT I (A)
I - V
C
3
COMMON EMITTER
V =2V
C
CE
2
C
100
Ta=
Ta=25 C
1
BE
BE(sat)
C
VOLTAGE V (V)
Ta=-55 C
=25 C
a
T
00
Ta=1
C
BASE-EMITTER SATURATION
1
200m 300m 3 51500m
C
COLLECTOR CURRENT I (A)
C
Pc - Ta
1200
1000
800
5 C
5
Ta=-
600
C
P (mW)
400
COLLECTOR CURRENT I (A)
200
0
0
2001. 10. 23 2/3
0.8 1.6 2.4 3.2
BASE-EMITTER VOLTAGE V (V)
BE
Revision No : 0
COLLECTOR POWER DISSIPATION
0
0
40 80 120 160 200
AMBIENT TEMPERATURE Ta ( C)
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