KEC KTD1882 Datasheet

SEMICONDUCTOR
KTD1882
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
MAXIMUM RATING (Ta=25)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse (Note)
Base Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note : Pulse Width 10mS, Duty Cycle50%.
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
40 V
30 V
5 V
3
7
0.6 A
625 mW
150
-55150
EPITAXIAL PLANAR NPN TRANSISTOR
B
K
D
F
1 2
L
E
G
H
F
C
3
M
A
AJ
1. EMITTER
2. COLLECTOR
3. BASE
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E F
1.27
G
0.85
H
0.45
J K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter-Cut-off Current
I
I
CBO
EBO
hFE(1) VCE=2V, IC=20mA
DC Current Gain *
hFE(2) (Note) VCE=2V, IC=1A
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Current Gain Bandwidth Product
Collector Output Capacitance
V
V
CE(sat)
BE(sat)
f
T
C
ob
* Pulse Test : Pulse Width350ỌS, Duty Cycle2% Pulsed
Note: h
2000. 12. 8 1/2
(2) Classification O:100200 , Y:160320 , GR:200400
FE
Revision No : 0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2V, IB=0.2A
VCE=5V, IC=0.1A
VCB=10V, IE=0, f=1MHz
- - 1
- - 1
30 150 -
100 160 400
- 0.3 0.5 V
- 1.0 2.0 V
- 90 - MHz
- 45 - pF
A
A
KTD1882
K
I - V
C
CE
2.0
I =10mA
1.6
C
1.2
0.8
B
I =9mA
B
I =8mA
B
I =7mA
B
I =6mA
B
I =5mA
B
I =4mA
B
0.4
COLLECTOR CURRENT I (A)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
V ,V - I
1K
500
BE(sat)
300
100
CE(sat),
50
30
CE(sat)
V (sat)
BE
V (sat)
CE
BE(sat)
C
10
5 3
1
10030 300
SATURATION VOLTAGE V V (mV)
COLLECTOR CURRENT I (mA)
C
I =3mA
B
I =2mA
B
I =1mA
B
16128204
CE
I /I =10
C B
1K1013
3K
h - I
FE
C
1K
500
FE
300
V =2V
CE
100
50
30
10
5
DC CURRENT GAIN h
3
1
1
3 5 10 30 50 100 300 1K 3K
COLLECTOR CURRENT I (mA)
C
f - I
1K
T
C
T
500 300
V =5V
100
CE
50 30
10
5 3
1
0.3
0.01
CURRENT GAIN BANDWIDTH PRODUCT f (MHz)
0.03
0.1
COLLECTOR CURRENT I (A)
1
C
5
103
C - V
ob CB
1K
500
f=1MHz I =0
E
300
ob
100
50
30
10
5
CAPACITANCE C (pF)
3
1
13
2000. 12. 8 2/2
10 30 100 300
COLLECTOR-BASE VOLTAGE V (V)
CB
Revision No : 0
3K1K
700
600
500
400
C
300
P (mW)
200
100
COLLECTOR POWER DISSIPATION
0
25 50 75 100 125 150
0
AMBIENT TEMPERATURE Ta ( C)
P - Ta
C
5
17
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