KEC KTD1691 Datasheet
2003. 7. 24 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1691
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : PC=1.5W(Ta=25 )
Complementary to KTB1151.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltage
V
EBO
7 V
Collector Current
DC
I
C
5
A
Pulse *
I
CP
8
Base Current
I
B
1 A
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 10
A
Emitter Cut-off Current
I
EBO
VEB=7V, IC=0
- - 10
A
DC Current Gain *
h
FE
1 VCE=1V, IC=0.1A
60 - -
hFE2 (Note) VCE=1V, IC=2A
160 - 400
h
FE
3 VCE=2V, IC=5A
50 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
IC=2A, IB=0.2A
- 0.1 0.3 V
Base-Emitter Saturation Voltage *
V
BE(sat)
IC=2A, IB=0.2A
- 0.9 1.2 V
Switching
Time
Turn On Time
t
on
- 0.2 1
S
Storage Time
t
stg
- 1.1 2.5
Fall Time
t
f
- 0.2 1
* Pulse test : PW 50 S, Duty Cycle 2% Pulse
Note) h
FE
(2) Classification : O:160 320, Y:200 400.
* PW 10ms, Duty Cycle 50%
A
B
C
H
J
K
M
N
1
23
D
E
F
G
L
O
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
+
Φ3.2 0.1
3.5
_
+
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
+
0.75 0.15
_
+
15.50 0.5
_
+
2.3 0.1
_
+
0.65 0.15
1.6
3.4 MAX
TO-126
20µsec
I
B1
I =-I =0.2A
B2
B1
DUTY CYCLE
I
B2
<
1%
=
INPUT
OUTPUT
I
B1
I
B2
5Ω
V =10V
CC
2003. 7. 24 2/3
KTD1691
Revision No : 3
25
1
20
C
15
10
5
POWER DISSIPATION P (W)
2
0
0
50 100 150 200
AMBIENT TEMPERATURE Ta ( C)
SAFE OPERATING AREA
10
I (Pulse) MAX.
C
5
I (DC) MAX.
C
C
3
Dissi
pation Limited
Pc - Ta
2mS*
10mS*
200mS
Tc=Ta
1
INFINITE HEAT SINK
2
NO HEAT SINK
160
140
120
T
100
80
Dissipation Limited
60
40
C
I DERATING d (%)
20
0
0
25 75 125 175
CASE TEMPERATURE Tc ( C)
SAFE OPERATING AREA
10
8
C
d - T
TC
S/b Limited
50
REVERSE BIAS
200100 150
1
0.5
* SINGLE NONREPETITVE
0.3
PULSE Ta=25 C
CURVES MUST BE DERATED
COLLECTOR CURRENT I (A)
LINEARLY WITH INCREASE
IN TEMPERATURE
0.1
131030
550
S/b Limited
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
CEC
10
C
8
B
I
B
I =150mA
=100mA
I =80mA
B
6
B
I =200mA
4
2
COLLECTOR CURRENT I (A)
0
0.80.40
1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
I =60mA
B
I =40mA
B
B
I =30mA
I =20mA
B
I =10mA
B
I =0mA
B
CE
CEO
V MAX.
100
6
4
2
COLLECTOR CURRENT I (A)
0
200
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
1k
500
300
FE
100
50
30
10
5
DC CURRENT GAIN h
3
1
0.01
0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
FE C
CEO
V (SUS)
8040 60 100
CE
V =2
CE
V =1
V
CE
C
V
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