2003. 7. 24 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1411
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE DARLINGTON TRANSISTOR.
FEATURES
High DC Current Gain : hFE=3000(Min.)
(V
CE
=2V, IC=1A)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltage
V
EBO
10 V
Collector Current
I
C
4 A
Base Current
I
B
0.5 A
Collector Power Dissipation (Tc=25 )
P
C
15 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=80V, IE=0
- - 20
A
Emitter Cut-off Current
I
EBO
VEB=10V, IC=0
- - 100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=10mA, IB=0
60 - - V
DC Current Gain
hFE(1) VCE=2V, IC=1A
3000 - -
hFE(2) VCE=2V, IC=3A
1000 - -
Saturation Voltage
Collector-Emitter
V
CE(sat)
IC=3A, IB=30mA
- - 1.5
V
Base-Emitter
V
BE(sat)
IC=3A, IB=30mA
- - 2.0
A
B
C
H
J
K
M
N
1
23
D
E
F
G
L
O
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
+
Φ3.2 0.1
3.5
_
+
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
+
0.75 0.15
_
+
15.50 0.5
_
+
2.3 0.1
_
+
0.65 0.15
1.6
3.4 MAX
TO-126
2/2
KTD1411
Revision No : 2
30k
FE
10k
5k
3k
DC CURRENT GAIN h
1k
500
0.1 0.3 0.5 1
COLLECTOR CURRENT I (A)
4
V =3V
CE
C
3
FE C
I - V
V - Ih - I
CE(sat) C
CE(sat)
2.0
COMMON EMITTER
1.8
I /I =100
C
1.6
B
1.4
V =2V
CE
1.2
1.0
0.8
0.6
0.4
0.2
0
35 10
C
SATURATION VOLTAGE V (V)
0.1
0.3 0.5 1 35 10
COLLECTOR CURRENT I (A)
C
SAFE OPERATING AREA
BEC
10
I MAX.(PULSED)*
C
5
I MAX.(CONTINUOUS)
C
C
3
DC OPERATION
Tc=25 C
1
0mS*
1mS*
100µS
*
2
1
COLLECTOR CURRENT I (A)
0
0
0.5 1 1.5 2
BASE EMITTER VOLTAGE V (V)
P - Ta
C
18
C
16
Tc=Ta
INFINITE HEAT SINK
14
12
10
8
6
4
2
0
0
COLLECTOR POWER DISSIPATION P (W)
50
100 150 20025 75 125 175
AMBIENT TEMPERATURE Ta ( C)
BE
1
0.5
SINGLE NONREPETITIVE
*
PULSE Tc=25 C
0.3
COLLECTOR CURRENT I (A)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
0.1
1 3 10 100
COLLECTOR-EMITTER VOLTAGE V (V)
CEO
V MAX.
30550
CE