KEC KTD1347 Datasheet
SEMICONDUCTOR
KTD1347
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
ᴌAdoption of MBIT processes.
ᴌLow collector-to-emitter saturation voltage.
ᴌFast switching speed.
ᴌLarge current capacity and wide ASO.
ᴌComplementary to KTB985.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
-55ᴕ150
60 V
50 V
6 V
3 A
6 A
1 W
150
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
B
P
DEPTH:0.2
C
Q
FF
HH
M
123
O
K
E
NN
1. EMITTER
2. COLLECTOR
3. BASE
G
M
D
A
J
R
D
L
H
DIM MILLIMETERS
A
B
C
S
D
E
F
G
H
J
K
H
L
M
N
O
P
Q
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 0.50
+
0.35 MIN
_
+
0.75 0.10
4
25
1.25
Φ1.50
0.10 MAX
_
+
12.50 0.50R
1.00S
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching
Time
Storage Time
Fall Time
Note : h
(1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400
FE
I
CBO
I
EBO
h
(1) (Note)
FE
h
(2) VCE=2V, IC=3A
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=100Ὠ
IC=2A, IB=100Ὠ
IC=2A, IB=100Ὠ
VCE=10V, IC=50Ὠ
VCB=10V, IE=0, f=1ὲ
PW=20µs
DC 1%
INPUT
I
B1
<
=
VR
50
-5V
10I 1=-10I =I =1A
B2 C
B
R8
I
B2
100µ
470µ
25V
- - 1
- - 1
ὧ
ὧ
100 - 400
35 - -
- 0.19 0.5 V
- 0.94 1.2 V
- 150 -
- 25 -
ὲ
ὸ
- 70 -
25
- 650 -
nS
- 35 -
1999. 11. 30 1/3
Revision No : 1
KTD1347
5.0
C
4.0
3.0
2.0
1.0
COLLECOTR CURRENT I (A)
0
0
0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE V (V)
2.0
1.8
1.6
C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
0246
COLLECTOR EMITTER VOLTAGE V (V)
I - V
I - V
CEC
100mA
CE
C
8mA
7mA
81012
80mA
60mA
40mA
20mA
10mA
5mA
I =0
B
CE
6mA
5mA
4mA
3mA
2mA
1mA
I =0
B
14 16 18 20
CE
I - V
3.2
V =2V
CE
2.8
C
2.4
2.0
1.6
1.2
0.8
0.4
COLLECTOR CURRENT I (A)
0
0.2 0.6 0.8 1.0 1.2
0
0.4
BASE EMITTER VOLTAGE V (V)
h - I
1k
500
FE
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (A)
CBEBE
FE C
0.30.10.030.01
C
C
C
25
-25
Ta=75
V =2V
CE
1310
C
V - I
BE(sat) C
10
I /I =20
C B
5
3
BE(sat)
0.5
1
Ta=25 C
Ta=-25 C
Ta=75 C
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.01 0.03
COLLECTOR CURRENT I (A)
1999. 11. 30 2/3
Revision No : 1
31010.30.1
C
1K
I /I =20
C B
500
300
100
CE(sat)
50
30
VOLTAGE V (mV)
COLLECTOR EMITTER SATURATION
10
0.01
V - I
CE(sat)
Ta=75 C
Ta=-25 C
C
Ta=25 C
0.10.03 0.3 1
COLLECTOR CURRENT I (A)
C
310
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