KEC KTC945B Datasheet
SEMICONDUCTOR
KTC945B
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent hFELinearity.
=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
: h
FE(IC
ᴌLow Noise : NF=1dB(Typ.). at f=1kHz
ᴌComplementary to KTA733B(O, Y, GR class).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
-55ᴕ150
60 V
50 V
5 V
150 mA
625 mW
150
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
hFE(Note) VCE=6V, IC=2mA
V
CE(sat)
V
BE(sat)
f
T
C
ob
Noise Figure NF
Note : hFEClassification O:70~140, Y:120~240, GR:200~400, BL:350~700
IC=100ỌA, IE=0
IC=1mA, IB=0
IE=100ỌA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=10V, IC=10mA
VCB=10V, IE=0, f=1MHz
VCE=6V, IC=0.1mA Rg=10kή, f=1kHz
60 - - V
50 - - V
5 - - V
- - 0.1
- - 0.1
ỌA
ỌA
70 - 700
- 0.1 0.25 V
- - 1.0 V
- 300 - MHz
- 2.0 3.5 pF
- 1.0 10 dB
2001. 9. 14 1/2
Revision No : 2
KTC945B
I - V
240
200
C
160
120
COLLECTOR CURRENT I (mA)
6.0
80
40
0
0
1234 567
COLLECTOR-EMITTER VOLTAGE V (V)
5.0
V - I
3
1
0.5
0.3
CE(sat)
C
CE
3.0
I =0.2mA
B
CE(sat) C
2.0
1.0
0.5
0
COMMON
EMITTER
I /I =10
COMMON
EMITTER
Ta=25 C
CE
CB
1k
500
FE
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
3k
T
1k
500
300
h - I
C
FE
Ta=100 C
Ta=25 C
Ta=-25 C
V =1V
1 3 10 30
f - I
ET
COMMON EMITTER
V =10V
CE
Ta=25 C
COMMON
EMITTER
V =6V
CE
CE
C
3001000.30.1
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.3 1 3 10
Ta=100 C
25 C
-25 C
COLLECTOR CURRENT I (mA)
I - V
BBE
3k
COMMON
1k
EMITTER
V =6V
300
B
100
CE
30
10
Ta=100 C
3
BASE CURRENT I (µA)
1
0.3
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
25 C
=
Ta
-25 C
=
Ta
100
50
30
10
300100300.1
C
TRANSITION FREQUENCY f (MHz)
-0.1 -30 -100 -300
EMITTER CURRENT I (mA)
-10-3-1-0.3
E
Pc - Ta
700
600
500
400
C
300
P (mW)
200
100
COLLECTOR POWER DISSIPATION
BE
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
2001. 9. 14 2/2
Revision No : 2
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