KEC KTC812U Datasheet
SEMICONDUCTOR
KTC812U
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌA super-minimold package houses 2 transistor.
ᴌExcellent temperature response between these 2 transistor.
ᴌHigh pairing property in h
ᴌThe follwing characteristics are common for Q
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
.
FE
, Q2.
1
V
V
V
PC *
T
CBO
CEO
EBO
I
C
I
B
T
stg
j
60 V
50 V
5 V
150 mA
30 mA
200 mW
150
-55ᴕ150
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
DIM MILLIMETERS
C
A
A1
C
H
1
2
3
G
1. Q EMITTER
1
2. Q BASE
1
3. Q BASE
2
4. Q COLLECTOR
2
5. Q EMITTER
2
6. Q COLLECTOR
1
6
A
5
B
D
4
B1
C
D
G
H
T
T
_
2.00 0.20
+
_
1.3 0.1A1
+
_
2.1 0.1
+
_
1.25 0.1
+
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
US6
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
h
I
I
FE
V
CBO
EBO
(Note)
CE(sat)
f
T
C
ob
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure NF
Note : hFEClassification Y(4):120ᴕ240, GR(6):200ᴕ400
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2Ὠ
IC=100Ὠ, IB=10Ὠ
VCE=10V, IC=1Ὠ
VCB=10V, IE=0, f=1ὲ
VCE=6V, IC=0.1Ὠ, f=1ά, Rg=10ὶ
Marking
Q1
1
Q2
23
- - 0.1
- - 0.1
120 - 400
- 0.1 0.3 V
80 - -
- 2 3.5
- 1.0 10
Type Name
46
5
h Rank
W
FE
ὧ
ὧ
ὲ
ὸ
123
2002. 1. 7 1/3
Revision No : 0
KTC812U
I - V
240
200
C
160
120
80
40
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
5.0mA
6.0mA
3.0mA
12345 67
V - I
1
0.5
0.3
CEC
COMMON EMITTER
Ta=25 C
2.0mA
1.0mA
0.5mA
I =0.2mA
B
CE(sat) C
COMMON EMITTER
I /I =10
C B
h - I
FE
500
300
100
FE
1k
Ta=100 C
Ta=25 C
Ta=-25 C
C
COMMON EMITTER
V =6V
CE
50
30
DC CURRENT GAIN h
0
CE
10
310.30.1
COLLECTOR CURRENT I (mA)
V - I
10
5
3
V =1V
CE
10 30 100 300
C
CBE(sat)
COMMON EMITTER
I /I =10
C
B
Ta=25 C
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
f - I
TC
3k
1k
T
500
300
100
50
30
TRANSITION FREQUENCY f (MHz)
10
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
C
100
=
Ta
Ta=25 C
Ta=-25 C
C
COMMON EMITTER
V =10V
CE
Ta=25 C
C
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.1
0.3 1 10
COLLECTOR CURRENT I (mA)
3k
COMMON
EMITTER
1k
V =6V
CE
300
B
100
30
10
3
BASE CURRENT I (µA)
1
0.3
0
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
I - V
B
C
C
0
Ta=10
Ta=25
BE
=-25
Ta
100 3003
30
C
C
BE
2002. 1. 7 2/3
Revision No : 0
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