KEC KTC802E Datasheet
SEMICONDUCTOR
KTC802E
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌHigh Current.
ᴌLow V
: V
ᴌComplementary to KTA702E.
MAXIMUM RATINGS (Ta=25ᴱ)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note : Single pulse Pw=1mS.
* Total Rating.
.
CE(sat)
ᴪ250mV at IC=200mA/IB=10mA.
CE(sat)
CHARACTERISTIC SYMBOL RATING UNIT
I
V
V
V
CP
CBO
CEO
EBO
I
C
(Note)
PC *
T
j
T
stg
15 V
12 V
6 V
500 mA
1 A
200 mW
150
-55ᴕ150
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
C
A
A1
C
H
1. Q EMITTER
1
2. Q BASE
1
3. Q COLLECTOR
2
4. Q EMITTER
2
5. Q BASE
2
6. Q COLLECTOR
1
1
2
3
P
6
DIM MILLIMETERS
5
D
4
P
J
_
+
A
1.6 0.05
_
+
A1
1.0 0.05
_
B
1.6 0.05
+
_
B1
1.2 0.05
+
C
0.50
_
D
0.2 0.05
+
_
H
0.5 0.05
+
_
J
0.12 0.05
+
P5
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
654
Q1 Q2
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
V
CE(sat)
C
FE
f
T
ob
VCB=15V, IE=0
IC=10ỌA
IC=1mA
IE=10ỌA
VCE=2V, IC=10mA
IC=200mA, IB=10mA
VCE=2V, IC=10mA, fT=100MHz
VCB=10V, IE=0, f=1MHz
Marking
Type Name
1
23
- - 100 nA
15 - - V
12 - - V
6 - - V
270 - 680 -
- 90 250 mV
- 320 - MHz
- 7.5 - pF
46
5
L Z
123
2002. 2. 20 1/3
Revision No : 1
K
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
V =2V
CE
10
13
h - I
C
FE
Ta=125 C
Ta=25 C
Ta=-40 C
10 30 100 300 1K
KTC802E
V - I
CE(sat) C
1K
I /I =20
CB
500
300
100
50
30
CE(sat)
10
5
3
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
13110 30 100 300 1K
Ta=
1
Ta=
25
C
25
Ta=-
C
40
C
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
1K
Ta=25 C
500
300
100
50
30
CE(sat)
10
5
3
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
I /I =50
CB
0
=2
/I
B
I
C
0
1
=
I
/
B
I
C
13110 30 100 300 1K
COLLECTOR CURRENT I (mA)
C
10K
COLLECTOR CURRENT I (mA)
V - I
BE(sat) C
I /I =20
CB
C
5K
3K
BE(sat)
1K
500
300
Ta=-40 C
Ta=25 C
a=125
T
C
VOLTAGE V (mV)
BASE-EMITTER SATURATION
100
1310 30 100 300 1K
C
COLLECTOR CURRENT I (mA)
C
I - V
BE
C
1K
V =2V
500
CE
300
C
1K
V =2V
CE
Ta=25 C
500
T
300
f - I
T
C
100
50
30
10
5
C
25
Ta=1
Ta=25 C
Ta=-40 C
100
50
30
3
COLLECTOR CURRENT I (mA)
1
0
BASE-EMITTER VOLTAGE V (V)
2002. 2. 20 2/3
0.5 1.0 1.5
BE
Revision No : 1
10
TRANSITION FREQUENCY f (MHz)
1310 30 100 300 1
COLLECTOR CURRENT I (mA)
C
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