KEC KTC5103L, KTC5103D Datasheet
2003. 3. 27 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC5103D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : PC=1.3W(Ta=25 )
Complementary to KTA1385D/L
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse test : PW 50 S, Duty Cycle 2% Pulse
Note) h
FE
(2) Classification : O:160 320, Y:200 400.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltage
V
EBO
7 V
Collector Current
DC
I
C
5
A
Pulse *
I
CP
8
Base Current
I
B
1 A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
15
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 10
A
Emitter Cut-off Current
I
EBO
VEB=7V, IC=0
- - 10
A
DC Current Gain *
hFE(1) VCE=1V, IC=0.1A
60 - -
hFE(2) (Note) VCE=1V, IC=2A
160 - 400
hFE(3) VCE=2V, IC=5A
50 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
IC=2A, IB=0.2A
- 0.1 0.3 V
Base-Emitter Saturation Voltage *
V
BE(sat)
IC=2A, IB=0.2A
- 0.9 1.2 V
Switching
Time
Turn On Time
t
on
- 0.2 1
S
Storage Time
t
stg
- 1.1 2.5
Fall Time
t
f
- 0.2 1
* PW 10ms, Duty Cycle 50%
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
A
C
K
F
D
B
E
I
M
P
DPAK
J
O
L
DIM MILLIMETERS
A
B
C
D
E
F
H
I
J
K
L
6.60 0.2
6.10 0.2
_
+
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
_
+
_
+
_
+
_
+
_
+
_
+
_
+
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
6.60 0.2
6.10 0.2
_
+
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
_
+
0.5 0.1
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
Q
H
G
A
C
F
F
123
20µsec
I
B1
I =-I =0.2A
B2
B1
DUTY CYCLE
I
B2
<
1%
=
INPUT
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
OUTPUT
I
B1
I
B2
V =10V
CC
5Ω
2003. 3. 27 2/3
KTC5103D/L
Revision No : 3
25
20
C
15
Tc=25 C
10
5
POWER DISSIPATION P (W)
Ta=25 C
0
0
50 100 150 200 250
AMBIENT TEMPERATURE Ta ( C)
SAFE OPERATING AREA
10
I (Pulse) MAX. *
C
5
I MAX.
C
COLLECTOR CURRENT I (A)
C
3
200mS*
Dissipation Limited
S/b Limited
1
0.5
* SINGLE NONREPETITVE
0.3
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0.1
131030
550
COLLECTOR-EMITTER VOLTAGE V (V)
Pc - Ta
2m
S*
10mS*
CE
CEO
V MAX.
100
d - T
160
140
120
T
100
80
S/b Limited
Dissipation Limited
60
40
C
I DERATING d (%)
20
0
0
25 75 125 175
50
CASE TEMPERATURE Tc ( C)
REVERSE BIAS
SAFE OPERATING AREA
10
C
8
6
4
2
COLLECTOR CURRENT I (A)
0
20
COLLECTOR-EMITTER VOLTAGE V (V)
TC
CEO
V (SUS)
200100 150
8040 60 100
CE
I - V
10
CEC
1k
h - I
FE C
500
300
C
8
B
I =100mA
I =150mA
6
B
I =200mA
4
I =80mA
B
B
I =60mA
B
I =40mA
B
B
I =30mA
I =20mA
B
FE
100
50
30
V =1
CE
V =2
CE
V
V
10
I =10mA
2
COLLECTOR CURRENT I (A)
0.80.40
COLLECTOR-EMITTER VOLTAGE V (V)
B
I =0mA
B
1.2 1.6 2.0
CE
5
DC CURRENT GAIN h
3
1
0.01
0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT I (A)
C
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