KEC KTC4527F Datasheet
SEMICONDUCTOR
KTC4527F
TECHNICAL DATA
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
(Tc=25ᴱ)
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
1100 V
800 V
7 V
3
10
1.5 A
40 W
150
-55ᴕ150
ᴱ
ᴱ
TRIPLE DIFFUSED NPN TRANSISTOR
A
U
E
L
K
D
A
N
T
O
1
F
B
G
L
M
J
D
N
T
3
2
Q
C
P
S
T
V
1. BASE
2. COLLECTOR
3. EMITTER
MILLIMETERS
DIM
10.30 MAX
A
15.30 MAX
B
C
2.70Ź0.30
D
0.85 MAX
Ѹ3.20Ź0.20
E
F
3.00Ź0.30
12.30 MAX
G
0.75 MAX
H
R
H
13.60Ź0.50
J
K
3.90 MAX
L
1.20
1.30
M
N
2.54
4.50Ź0.20
O
6.80
P
2.60Ź0.20
Q
R
10Ɓ
S
25Ş
5Ş
T
U
0.5
V
2.60Ź0.15
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaning Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Output Capacitance
Transition Frequency
Turn On Time
Switching
Time
Storage Time
Fall Time
I
CBO
I
EBO
V
CEX(SUS)
V
CE(sat)
V
BE(sat)
h
(1) (Note) VCE=5V, IC=0.2A
FE
h
(2) VCE=5V, IC=1A
FE
BV
CBO
BV
CEO
BV
EBO
C
ob
f
T
t
on
t
stg
t
f
VCB=800V, IE=0
VEB=5V, IC=0
IC=1.5A, IB1=-IB2=0.3A
L=2mH, Clamped
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
IC=1mA, IE=0
IC=5mA, RBE=ᴬ
IE=1mA, IC=0
VCB=10V, f=1MHz, IE=0
VCE=10V, IC=0.2A
20µS
I
B1
I
I =0.4A , I =-0.8A
B1
DUTY CYCLE
B2
INPUT
B2
<
=
1%
I
B1
I
B2
OUTPUT
200Ω
V =400V
CC
- - 10
- - 10
ỌA
ỌA
800 - - V
- - 2 V
- - 1.5 V
15 - 40
8 - -
1100 - - V
800 - - V
7 - - V
- 60 - pF
- 15 - MHz
- - 0.5
- - 3
- - 0.3
ỌS
Note : h
2001. 4. 9 1/3
(1) Classification R:15ᴕ30, O:20ᴕ40
FE
Revision No : 0
KTC4527F
K
2.4
2.0
C
1.6
1.2
0.8
0.4
COLLECTOR CURRENT I (A)
0
0
1
2345678910
COLLECTOR-EMITTER VOLTAGE V (V)
V , V - I
CE(sat) C
5
I =5I
CB
3
1
V
0.5
0.3
BE(sat)
I - V
C
BE(sat)
BE(sat)
CE
250mA
200mA
150mA
100mA
80mA
60mA
50
40mA
30mA
20mA
10mA
I =0mA
B
mA
CE
100
50
FE
30
10
5
3
DC CURRENT GAIN h
1
COLLECTOR CURRENT I (A)
3
V =5V
CE
C
2
h - I
FE
I - V
C
C
V =5V
CE
0.30.10.030.01 1 3
C
BE
0.1
0.05
CE(sat)
V , V (V)
0.03
SATURATION VOLTAGE
V
0.01
COLLECTOR CURRENT I (A)
SWITCHING CHARACTERISTICS
10
5
3
1
0.5
0.3
SWITCHING TIME (µS)
0.1
0.05
0.03
0.1
COLLECTOR CURRENT I (A)
CE(sat)
10.01 0.03 0.1 0.3 3
C
V =400V
CC
5.I 1=-2.5. I 2=I
BBC
t
t
t
f
0.3 0.5 1 3 5
C
1
COLLECTOR CURRENT I (A)
0
0
0.2 0.4 0.6 0.8 1.21.0
BASE EMITTER VOLTAGE V (V)
BE
SAFE OPERATING AREA
20
I MAX(PULSE)*
C
10
I MAX(CONTINUOUS)
C
3
C
1
stg
on
0.3
0.1
DC OPE
RAT
ION
10
m
0.03
0.01
COLLECTOR CURRENT I (A)
0.003
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
SINGLE NONREPETITIVE
*
0.001
1
2 5 10 50 100 200 1
20
COLLECTOR-EMITTER VOLTAGE V (V)
100µS*
1
mS
*
S*
500
CE
2001. 4. 9 2/3
Revision No : 0
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