KEC KTC4526 Datasheet
SEMICONDUCTOR
KTC4526
TECHNICAL DATA
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
(Tc=25ᴱ)
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
C
I
B
P
C
T
j
T
stg
1100 V
800 V
7 V
1.5
5
0.8 A
40 W
150
-55ᴕ150
ᴱ
ᴱ
TRIPLE DIFFUSED NPN TRANSISTOR
A
R
S
E
D
Q
H
L
C
A
K
J
MM
123
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
F
B
G
C
N
O
P
DIM MILLIMETERS
10.30 MAX
A
B
15.30 MAX
C
Φ3.60 0.20
D
T
E
F
13.60 0.50
G
H
J
K
L
M
N
O
P
Q1.50
R 9.50 0.20
S 8.00 0.20
T 2.90 MAX
0.80
_
+
3.00
6.70 MAX
_
+
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
_
+
_
+
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaning Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Output Capacitance
Transition Frequency
Turn On Time
Switching
Time
Storage Time
Fall Time
Note : h
(1) Classification R:15ᴕ30, O:20ᴕ40
FE
I
CBO
I
EBO
V
CEX(SUS)
V
CE(sat)
V
BE(sat)
h
(1) (Note) VCE=5V, IC=0.1A
FE
h
(2) VCE=5V, IC=0.5A
FE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
C
ob
f
T
t
on
t
stg
t
f
VCB=800V, IE=0
VEB=5V, IC=0
IC=0.75A, IB1=-IB2=0.15A
L=5mH, Clamped
IC=0.75A, IB=0.15A
IC=0.75A, IB=0.15A
IC=1mA, IE=0
IC=5mA, RBE=ᴬ
IE=1mA, IC=0
VCB=10V, f=1MHz, IE=0
VCE=10V, IC=0.1A
20µS
I
B1
I
I =0.2A , I =-0.4A
B1
DUTY CYCLE
B2
INPUT
B2
<
=
1%
I
B1
I
B2
OUTPUT
400Ω
V =400V
CC
- - 10
- - 10
ỌA
ỌA
800 - - V
- - 2 V
- - 1.5 V
15 - 40
8 - -
1100 - - V
800 - - V
7 - - V
- 35 - pF
- 15 - MHz
- - 0.5
- - 3
- - 0.3
ỌS
2000. 4. 10 1/3
Revision No : 0
KTC4526
K
1.2
1.0
C
0.8
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
0
1
2345678910
COLLECTOR-EMITTER VOLTAGE V (V)
V , V - I
CE(sat) C
5
I =5.I
B
C
3
1
0.5
0.3
BE(sat)CE(sat)
0.1
0.05
V , V (V)
0.03
SATURATION VOLTAGE
V
CE(sat)
0.01
0.030.01 0.1 0.3 1 2
COLLECTOR CURRENT I (A)
I - V
C
BE(sat)
V
BE(sat)
CE
I =120mA
B
I =100mA
B
=80mA
I
B
=60mA
I
B
=40mA
I
B
=20m
I
B
I =10mA
B
I =5mA
B
I =0mA
B
CE
C
FE
h - I
100
50
30
CFE
V =5V
CE
10
A
5
3
1
0.01 1
1.6
1.4
C
1.2
0.03 0.1 0.3 2
COLLECTOR CURRENT I (A)
I - V
CBE
V =5V
CE
C
1.0
0.8
0.6
0.4
0.2
COLLECTOR CURRENT I (A) DC CURRENT GAIN h
0
0.2 0.4 0.6 0.8 1.21.0
0
BASE EMITTER VOLTAGE V (V)
BE
SAFE OPERATING AREA
SWITCHING CHARACTERISTICS
10
5
3
t
1
0.5
0.3
Switching Time (µS)
0.1
0.05
0.03
0.1
0.3 0.5 1 3 5
COLLECTOR CURRENT I (A)
2000. 4. 10 2/3
Revision No : 0
stg
t
on
t
f
C
10
I MAX(PULSE)*
C
5
I MAX(CONTINUOUS)
2
C
C
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
COLLECTOR CURRENT I (A)
0.002
SINGLE NONREPETITIVE
*
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0.001
1
2 5 10 50 100 200 1
COLLECTOR-EMITTER VOLTAGE V (V)
20
DC OPE
RAT
1
00
µS*
1mS*
10
m
S
*
IO
N
500
CE
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