KEC KTC4511 Datasheet

SEMICONDUCT

KTC451

1

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 0

HIGH POWER AMPLIFIER APPLICATION.

FEATURES

·Complementary to KTA1725.

MAXIMUM RATING (Ta=25℃)

DIM

MILLIMETERS

1. BASE

2. COLLECTOR

3. EMITTER

F

O

Q

1

2

3

L

P

N

B

G

J

M

D

N

T

T

H

E

R

T

V

S

K

L

U

T

S

0.5

5󰿽

25󰿽

2.600.15

V

U

D

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Collector-Emitter Saturation Voltage

V

CE(sat)

IC=2A, IB=0.2A

- - 0.5 V

Transition Frequency

f

T

VCE=12V, IC=0.5A

- 20 - MHz

Collector Output Capacitance

C

ob

VCB=10V, IE=0, f=1MHz

- 150 - pF

OR

TECHNICAL DATA

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Collector Power Dissipation (Tc=25℃)

Junction Temperature

Storage Temperature Range

V

CBO

V

CEO

V

EBO

I

I

P

T

T

A

80 V

80 V

C

10.30 MAX

A

15.30 MAX

B
C

2.700.30

D

0.85 MAX

3.200.20

E
F

3.000.30

12.30 MAX

G

0.75 MAX

H

13.600.50

J

K

3.90 MAX

L

1.20

1.30

M

N

2.54

4.500.20

O

6.80

P

2.600.20

Q

R

10

6 V

C

B

C

j

stg

6 A

3 A

30 W

150

-55～150

℃

℃

TO-220IS

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

DC Current Gain

Note : hFEClassification R:55~110, O:80~160.

2002. 6. 5 1/3

I

CBO

I

EBO

V

(BR)CEO

h

(Note) VCE=4V, IC=2A

FE

VCB=80V, IE=0

VEB=6V, IC=0

IC=25mA, IB=0

- - 10

- - 10

80 - - V

55 - 160

μA

μA

KTC451

COLLECTOR CURRENT I (A)

0

C

0

COLLECTOR-EMITTER VOLTAGE V (V)

CE

CEC

I - V

I - V

BE

BASE-EMITTER VOLTAGE V (V)

BASE CURRENT I (A)

0

0

B

V - I

CE(sat)

B

1234

2

4

6

0.51.0 1.5

1

2

3

CBE

2

0

2

4

6

VOLTAGE V (V)

CE(sat)

COLLECTOR-EMITTER SATURATION

Tc=125 C

DC CURRENT GAIN h

3

COLLECTOR CURRENT I (A)

0.10.01

10

30

50

100

0.03 0.31

C

10

V =4V

FE

1k

500

300

CE

h - I

FE C

Tc=125

C

Tc=-30

C

Tc

=2

5

C

1k

100

10

1

0.10.0010.011011k100

0.1

2

1

2

A

A

B

I =200m

A

B

I =150m

=100mA

I

B

=80

I

B

I =50mA

I =30mA

I =20mA

I =10mA

m

B

B

B

B

1

I =2A

C

I =4A

C

I =6A

C

V =4V

CE

C

Tc=25

C

C

0

3

=-

Tc

FE

h - I

1k

V =4V

CE

500

300

C

5

100

Tc=12

FE C

50

30

DC CURRENT GAIN h

COLLECTOR CURRENT I (A)

0

1

10

0.01

0.03

COLLECTOR CURRENT I (A)

0.30.1

1310

C

Tc=25 C

c=-30

T

R - t

th

1

NO HEAT SINK

INFINITE SINK

th

r ( C/W)

TRANSIENT THERMAL RESISTANCE

TIME t (S)

C

2002. 6. 5 2/3

Revision No : 0