SEMICONDUCTOR
KTC4072V
SWITCHING APPLICATION.
FEATURES
ᴌHigh Current.
ᴌLow V
: V
CE(sat).
ᴪ250mV at IC=200mA/IB=10mA.
CE(sat)
ᴌComplementary to KTA2012V.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Single pulse Pw=1mS.
TECHNICAL DATA
V
CBO
V
CEO
V
EBO
I
C
I
*
CP
P
C
T
j
T
stg
15 V
12 V
6 V
500 mA
1 A
100 mW
150
-55ᴕ150
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
A
G
H
K
C
1. EMITTER
2. BASE
3. COLLECTOR
2
1
P
P
D
3
J
DIM MILLIMETERS
A
B
C
D
E
G
H
K 0.2 0.05
P
_
1.2 0.05
+
_
0.8 0.05
+
_
0.5 0.05
+
_
0.3 0.05
+
_
1.2 0.05
+
_
0.8 0.05
+
0.40
_
0.12 0.05
J
+
_
+
5
VSM
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
V
CE(sat)
C
FE
f
T
ob
VCB=15V, IE=0
IC=10ỌA
IC=1mA
IE=10ỌA
VCE=2V, IC=10mA
IC=200mA, IB=10mA
VCE=2V, IC=10mA, fT=100MHz
VCB=10V, IE=0, f=1MHz
Marking
Type Name
L Z
- - 100 nA
15 - - V
12 - - V
6 - - V
270 - 680 -
- 90 250 mV
- 320 - MHz
- 7.5 - pF
2002. 2. 20 1/3
Revision No : 2
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
V =2V
CE
10
13
KTC4072V
h - I
C
FE
Ta=125 C
Ta=25 C
Ta=-40 C
10 30 100 300 1K
V - I
CE(sat) C
1K
I /I =20
CB
500
300
100
50
Ta=
1
Ta=
25
C
C
25
Ta=-40
30
CE(sat)
10
5
3
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
13110 30 100 300 1K
C
COLLECTOR CURRENT I (mA)
V - I
CE(sat) C
1K
Ta=25 C
500
300
100
50
30
CE(sat)
10
5
3
VOLTAGE V (mV)
COLLECTOR-EMITTER SATURATION
I /I =50
CB
0
2
=
/I
B
I
C
10
=
B
I /I
C
13110 30 100 300 1K
COLLECTOR CURRENT I (mA)
C
10K
COLLECTOR CURRENT I (mA)
V - I
BE(sat) C
I /I =20
CB
C
5K
3K
BE(sat)
1K
500
300
Ta=-40 C
25
=
a
T
a=125
T
C
C
VOLTAGE V (mV)
BASE-EMITTER SATURATION
100
1310 30 100 300 1K
C
COLLECTOR CURRENT I (mA)
C
I - V
BE
C
1K
V =2V
500
CE
300
C
1K
V =2V
CE
Ta=25 C
500
T
300
f - I
T
C
100
50
30
10
Ta=125 C
5
Ta=25 C
Ta=-40
C
100
50
30
3
COLLECTOR CURRENT I (mA)
1
0
BASE-EMITTER VOLTAGE V (V)
2002. 2. 20 2/3
0.5 1.0 1.5
BE
Revision No : 2
10
TRANSITION FREQUENCY f (MHz)
1310 30 100 300 1
COLLECTOR CURRENT I (mA)
C