KEC KTC3770U Datasheet
2002. 10. 14 1/5
SEMICONDUCTOR
TECHNICAL DATA
KTC3770U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S
21e
|2=11dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1 : hFEClassification A:50~100, B:80~160, C:125~250.
Note 2 : C
re
is measured by 3 terminal method with capacitance bridge.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
20 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
3 V
Collector Current
I
C
100 mA
Collector Power Dissipation
P
C
150 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=10V, IE=0
- - 1
A
Emitter Cut-off Current
I
EBO
VEB=1V, IC=0
- - 1
A
DC Current Gain
h
FE
(Note1) VCE=10V, IC=20mA
50 - 250
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz (Note2)
- - 1.0 pF
Reverse Transfer Capacitance
C
re
- 0.65 1.15 pF
Transition Frequency
f
T
VCE=10V, IC=20mA
5 7 - GHz
Insertion Gain
|S
21e
|
2
VCE=10V, IC=20mA, f=1GHz
7.5 11.5 - dB
Noise Figure NF
VCE=10V, IC=7mA, f=1GHz
- 1.1 2 dB
E
B
MM
A
J
G
C
L
2
1
N
K
1. EMITTER
2. BASE
3. COLLECTOR
DIM MILLIMETERS
A
D
B
H
C
D
E
G
H
J
K
L
M 0.42 0.10
N 0.10 MIN
3
N
_
2.00 0.20
+
_
+
1.25 0.15
_
0.90 0.10
+
0.3+0.10/-0.05
_
+
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
+
USM
Marking
Type Name
R
h Rank
FE
2002. 10. 14 2/5
KTC3770U
Revision No : 0
TYPICAL CHARACTERISTICS (Ta=25 C)
Pc - Ta
300
C
200
100
0
0
COLLECTOR POWER DISSIPATION P (mW)
500
300
FE
100
50 100 150
AMBIENT TEMPERATURE Ta ( C)
h - I
FE
C
V =10V
CE
C , C - V
ob re
5
re
3
ob
1
0.5
0.3
OUTPUT CAPACITANCE C (pF)
0.1
0.1
0.3 0.5 1 3 5 10
REVERSE TRANSFER CAPACITANCE C (pF)
COLLECTOR-BASE VOLTAGE V (V)
2
S - I
2le
C
15
2
2le
10
CB
f=1MHz
Ta=25 C
C
re
C
ob
CB
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
f - I
TC
10
V =10V
CE
T
5
3
1
TRANSITION FREQUENCY f (GHz)
1 3 5 10 30 50 100
C
5
V =10V
C
CE
f=1.0GHz
V =10V
CE
I =20mA
C
INSERTION GAIN S (dB)
0
1003010310.5
1
3 5 10 30 50 100
COLLECTOR CURRENT I (mA)
2
S - f
2le
30
2
2le
20
2
S
2le
10
INSERTION GAIN S (dB)
0
0.1
0.3 0.5 1 3
COLLECTOR CURRENT I (mA)
C
FREQUENCY f (GHz)
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