KEC KTC3770S Datasheet

2003. 2. 12 1/5

SEMICONDUCTOR

TECHNICAL DATA

KTC3770S

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 1

VHF/UHF WIDE BAND AMPLIFIER APPLICATION.

FEATURES

Low Noise Figure, High Gain.

NF=1.1dB, |S

21e

|2=11dB (f=1GHz).

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note 1 : hFEClassification A:50~100, B:80~160, C:125~250.
Note 2 : C

re

is measured by 3 terminal method with capacitance bridge.

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

20 V

Collector-Emitter Voltage

V

CEO

12 V

Emitter-Base Voltage

V

EBO

3 V

Collector Current

I

C

100 mA

Collector Power Dissipation

P

C

150 mW

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current

I

CBO

VCB=10V, IE=0

- - 1

A

Emitter Cut-off Current

I

EBO

VEB=1V, IC=0

- - 1

A

DC Current Gain

h

FE

(Note1) VCE=10V, IC=20mA

50 - 250

Collector Output Capacitance

C

ob

VCB=10V, IE=0, f=1MHz (Note2)

- - 1.0 pF

Reverse Transfer Capacitance

C

re

- 0.65 1.15 pF

Transition Frequency

f

T

VCE=10V, IC=20mA

5 7 - GHz

Insertion Gain

|S

21e

|

2

VCE=10V, IC=20mA, f=1GHz

7.5 11.5 - dB

Noise Figure NF

VCE=10V, IC=7mA, f=1GHz

- 1.1 2 dB

E

B

LL

DIM MILLIMETERS

A

B

C

D

3

M

D

E

G 1.90

H

J

K

L

M

N

P7

J

C

H

N

2

1

PP

K

1. EMITTER

2. BASE

3. COLLECTOR

A

G

_
+

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

SOT-23

Marking

h Rank

FE

Type Name

R

Lot No.

2003. 2. 12 2/5

KTC3770S

Revision No : 1

TYPICAL CHARACTERISTICS (Ta=25 C)

Pc - Ta

300

C

250

200

150

100

50

0

0

COLLECTOR POWER DISSIPATION P (mW)

500

300

FE

100

50 100 15025 75 125

AMBIENT TEMPERATURE Ta ( C)

h - I

FE

C

V =10V

CE

C , C - V

ob re

5

re

3

ob

1

0.5

0.3

OUTPUT CAPACITANCE C (pF)

0.1

0.1

0.3 0.5 1 3 5 10

REVERSE TRANSFER CAPACITANCE C (pF)

COLLECTOR-BASE VOLTAGE V (V)

2

S - I

2le

C

15

2

2le

10

CB

f=1MHz
Ta=25 C

C

re

C

ob

CB

50

30

DC CURRENT GAIN h

10

COLLECTOR CURRENT I (mA)

f - I

TC

10

V =10V

CE

T

5

3

1

TRANSITION FREQUENCY f (GHz)

1 3 5 10 30 50 100

C

5

V =10V

C

CE

f=1.0GHz

V =10V

CE

I =20mA

C

INSERTION GAIN S (dB)

0

1003010310.5

1

3 5 10 30 50 100

COLLECTOR CURRENT I (mA)

2

S - f

2le

30

2

2le

20

2

S

2le

10

INSERTION GAIN S (dB)

0

0.1

0.3 0.5 1 3

COLLECTOR CURRENT I (mA)

C

FREQUENCY f (GHz)