2003. 3. 27 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3631D/L
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 4
HIGH VOLTAGE SWITCHING.
FEATURES
Low Collector Saturation Voltage
: V
CE(sat)
=0.5V(Max.) at (IC=0.5A).
High Switching Speed Typically.
: t
f
0.4 S at IC=1A.
Complementary to KTA1862D.
Wide Safe Operating Area (SOA)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification O:56 120 , Y:82 180
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=400V, IE=0
- - 1.0
A
Emitter Cut-off Current
I
EBO
VEB=5.0V, IC=0
- - 1.0
A
DC Current Gain
hFE(1) (Note) VCE=5.0V, IC=100mA
56 100 180
hFE(2) VCE=5.0V, IC=500mA
6 - -
Collector Saturation Voltage
V
CE(sat)
IC=500mA, IB=100mA
- 0.3 0.5 V
Base Saturation Voltage
V
BE(sat)
IC=500mA, IB=100mA
- - 1.2 V
Transition Frequency
f
T
VCE=10V, IE=-100mA, f=5MHz
- 18 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 30 - pF
Switching
Time
Turn-on Time
t
on
- 0.2 -
S
Storage Time
t
stg
- 1.8 -
Fall Time
t
f
- 0.4 -
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
400 V
Collector-Emitter Voltage
V
CEO
400 V
Emitter-Base Voltage
V
EBO
7 V
Collector Current
DC
I
C
2.0
A
Pulse 4.0
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
Q
H
G
123
A
C
K
F
A
C
F
F
I
J
D
B
M
E
P
DIM MILLIMETERS
A
B
C
D
E
F
H
I
O
J
K
L
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.5 0.1
2.00 0.20
0.50 0.10
_
+
0.91 0.10M
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
DPAK
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
6.60 0.2
6.10 0.2
_
+
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
_
+
0.5 0.1
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
20µsec
I
B1
I =-I =0.2A
B2
B1
DUTY CYCLE
INPUT
I
B2
<
=
1%
I
B1
I
B2
OUTPUT
150Ω
V =150V
CC
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
2003. 3. 27 2/3
KTC3631D/L
Revision No : 4
1.0
100mA
0.8
C
80mA
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
0 1.0 2.0
COLLECTOR-EMITTER VOLTAGE V (V)
1k
300
FE
100
I - V
CCE
60mA
I =2.0mA
B
3.0 4.0 5.0
h - I
FE
C
40mA
20mA
10mA
5.0mA
CE
Ta=25 C
V =5V
CE
1.0
0.5
0.3
C
0.1
0.05
0.03
0.01
COLLECTOR CURRENT I (A)
0.005
0.003
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
BASE-EMITTER VOLTAGE V (V)
V , V - I
CE(sat) C
10
Ta=25 C
3.0
1.0
V
I - V
CBE
BE(sat)
I /I =5
B
BE(sat)
C
Ta=25 C
V =5.0V
CE
BE
30
10
DC CURRENT h
3.0
1.0
10
5.0
3.0
1.0
0.5
0.3
SWITCHING TIME (µs)
0.1
0.1 0.3 31
0.010.002
COLLECTOR CURRENT I (A)
0.1 1.0 2.00.03 0.3 0.002
C
SWITCHING CHARACTERISTIC
I /I =5
CB
V =150V
CB
I =-I
B1
B2
t
stg
t
f
0.5 5
COLLECTOR CURRENT I (A)
C
0.3
0.1
CE(sat) BE(sat)
V ,V (V)
0.03
SATURATION VOLTAGE
0.01
COLLECTOR CURRENT I (A)
REVERSE BIAS SAFE OPERATING AREA
2.5
2.0
C
1.5
1.0
0.5
COLLECTOR CURRENT I (A)
0
1000
COLLECTOR EMITTER VOLTAGE V (V)
B
C
V
C
E(sat)
V
CE(sa
I /I =10
)
t
B
C
I /I =5
0.030.01 0.1 1.00.3
C
L=10mH
CEO(SUS)
V
200 300 400 500
CE
2.0
CEX(SUS)
V