KEC KTC3503 Datasheet
2003. 7. 24 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3503
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 3
HIGH-DEFINITION CRT DISPLAY,
VIDEO OUTPUT APPLICATIONS.
FEATURES
High breakdown voltage : V
CEO
300V.
Small reverse transfer capacitance and
excellent high frequency characteristic.
: C
re
=1.8pF (VCB=30V, f=1MHz)
Complementary KTA1381.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFEClassification O:60 120, Y:100 200
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
300 V
Collector-Emitter Voltage
V
CEO
300 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
DC
I
C
100
mA
Pulse
I
CP
200
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
7
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=200V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
DC Current Gain
h
FE
(Note) VCE=10V, IC=10mA
60 - 200
Transition Frequency
f
T
VCE=30V, IC=10mA
- 150 - MHz
Collector Output Capacitance
C
ob
VCB=30V, IE=0, f=1MHz
- 2.6 - pF
Reverse Transfer Capacitance
C
re
VCB=30V, IE=0, f=1MHz
- 1.8 - pF
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=20mA, IB=2mA
- - 0.6 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=20mA, IB=2mA
- - 1.0 V
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
300 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA, IB=0
300 - - V
Base-Emitter Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
5 - - V
A
B
C
H
J
K
M
N
1
23
D
E
F
G
L
O
P
1. EMITTER
2. COLLECTOR
3. BASE
TO-126
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
+
Φ3.2 0.1
3.5
_
+
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
+
0.75 0.15
_
+
15.50 0.5
_
+
2.3 0.1
_
+
0.65 0.15
1.6
3.4 MAX
2003. 7. 24 2/3
KTC3503
Revision No : 3
20
16
C
12
8
4
COLLECTOR CURRENT I (mA)
0
0
246810
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
120
V =10V
100
C
80
60
40
20
COLLECTOR CURRENT I (mA)
CE
0
0 0.2
I - V
C
I =120µA
B
I =100µA
B
I =80µA
B
I =60µA
B
I =40µA
B
I =20µA
B
I =0
B
C
CE
BE
Ta=75 C
Ta=25 C
Ta=-25 C
0.80.4 0.6
CE
1.0
I - V
10
8
C
6
4
2
COLLECTOR CURRENT I (mA)
0
02
4
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
500
300
FE
100
50
30
DC CURRENT GAIN h
10
Ta=75 C
Ta=25 C
Ta=-25 C
C CE
I =60µA
B
I =50µA
B
I =40µA
B
I =30µA
B
I =20µA
B
I =10µA
B
I =0
B
FE
6
C
8
CE
V =10V
CE
10
1003010310.5
BASE-EMITTER VOLTAGE V (V)
f - I
T
500
300
T
100
30
10
TRANSITION FREQUENCY f (MHz)
0.5501310
COLLECTOR CURRENT I (mA)
BE
C
V =30V
CE
50
30
ob
COLLECTOR CURRENT I (mA)
C - V
Ob CB
C
f =1MHz
T
10
5
3
OUTPUT CAPACITANCE C (pF)
1
0.5
1
10 100
COLLECTOR BASE VOLTAGE V (V)
303
CB
C
30
100
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