KEC KTC3245 Datasheet
SEMICONDUCTOR
KTC3245
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
ᴌHigh Breakdown Voltage.
ᴌCollector Power Dissipation : P
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
=625mW.
C
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
400 V
350 V
6 V
300 mA
625 mW
150
-55ᴕ150
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. COLLECTOR
3. BASE
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (1)
Collector-Emitter Breakdown Voltage (2)
Emitter-Base Breakdown Voltage
Collector Cut off Current
Collector Cut off Current
Emitter Cutoff Current
DC Current Gain *
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
* Pulse Test : Pulse Width⏊300ỌS, Duty Cycle⏊2.0%
V
(BR)CBO
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
I
I
V
V
CBO
CES
EBO
h
FE
CE(sat)
BE(sat)
IC=100ỌA, IE=0
IC=1mA, IB=0
IC=100ỌA, IB=0
IE=10ỌA, IC=0
VCB=320V, IE=0
VCE=320V, IB=0
VEB=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
400 - - V
350 - - V
400 - - V
6.0 - - V
- - 100 nA
- - 500 nA
- - 100 nA
40 - -
50 - 200
45 - -
40 - -
- - 0.5 V
- - 0.75 V
2000. 8. 23 1/3
Revision No : 0
KTC3245
h - I
FE C
200
COMMON EMITTER
180
V =10V
CE
160
FE
140
120
100
80
60
DC CURRENT GAIN h
40
20
0
1 10k10 100
COLLECTOR CURRENT I (A)
TURN-OFF SWITCHING CHARACTERISTICS
100
50
30
10
5
3
TIME t (µS)
1
0.5
0.3
0.1
13
COLLECTOR CURRENT I (mA)
10 100
C
1k
C
V =150V
CC
I /I =10
B
C
Ta=25 C
30
TURN-ON SWITCHING CHARACTERISTICS
10
5
3
1
0.5
TIME t (µS)
0.3
0.1
COLLECTOR CURRENT I (mA)
C , C - V
ib ob CB
1k
500
300
ob
100
C
ib
50
ts
tf
ib
30
C
ob
10
5
3
CAPACITANCE C (pF), C (pF)
1
0.1 1
COLLECTOR-BASE VOLTAGE V (V)
V =150V
CC
I /I =10
B
C
Ta=25 C
V (OFF)=4V
BE
tr
td
C
10 100
30
CB
1001031
Ta=25 C
f=1MHz
1k
V , V - I
BE(sat) CE(sat) C
CE(sat)
1.0
0.8
0.6
Ta=25 C
V
V
BE(sat)
BE(on)
@I /I =10
C
B
@V =10V
CE
CE
0.4
BE(sat)
V , V (V)
0.2
SATURATION VOLTAGE
0
2000. 8. 23 2/3
V
CE(sat)
0.1 1
COLLECTOR CURRENT I (mA)
@I /I =10
B
C
10 100
Revision No : 0
1k
C
COLLECTOR EMITTER VOLTAGE V (V)
COLLECTOR SATURATION REGION
0.5
0.4
I =1mACI =10mA
0.3
0.2
0.1
0
10 100
C
BASE CURRENT I (µA)
I =50mA
C
1k 10k
B
Ta=25 C
100k
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