KEC KTC3114 Datasheet
2003. 7. 24 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3114
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURE
High DC Current Gain : hFE=600 3600.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note: h
FE
Classification A:600 1800, B:1200 3600
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
A
DC Current Gain
hFE(Note) VCE=6V, IC=2mA
600 - 3600
Collector- Emitter Saturation Voltage
V
CE(sat)
IC=100mA, IB=10mA
- 0.1 0.25 V
Transition Frequency
f
T
VCE=10V, IC=10mA
100 250 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 3.5 - pF
Noise Figure
NF(1)
VCE=6V, IC=0.1mA
f=100Hz, Rg=10k
- 0.5 - dB
NF(2)
VCE=6V, IC=0.1mA
f=1kHz, Rg=10k
- 0.3 - dB
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
150 mA
Base Current
I
B
30 mA
Collector Power Dissipation
P
C
1.5 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
A
B
C
H
J
K
M
N
1
23
D
E
F
G
L
O
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
+
Φ3.2 0.1
3.5
_
+
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
+
0.75 0.15
_
+
15.50 0.5
_
+
2.3 0.1
_
+
0.65 0.15
1.6
3.4 MAX
TO-126
2003. 7. 24 2/3
KTC3114
Revision No : 1
I - V
160
COMMON
140
EMITTER
C
120
Ta=25 C
100
80
60
40
20
COLLECTOR CURRENT I (mA)
0
123456
0
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
160
COMMON
EMITTER
140
V =6V
120
100
80
60
40
20
CE
0
0
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
C
COLLECTOR CURRENT I (mA)
C
Ta=100 C
CE
BEC
Ta=25 C
400
200
Ta=-25 C
BE
100
80
60
I =10µA
B
CE
h - I
FE C
5k
3k
FE
1k
Ta=100 C
Ta=25 C
Ta=-25 C
500
50
40
30
20
0
300
100
DC CURRENT GAIN h
50
30
COLLECTOR CURRENT I (mA)
1
0.5
COMMON EMITTER
V =6V
310.30.1
V - I
CE(sat) C
COMMON EMITTER
I / I =10
C
CE
10 30 100 200
C
B
0.3
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.1 0.3 1 3
Ta=100 C
Ta=25 C
Ta=-25 C
10 30 100
COLLECTOR CURRENT I (mA)
C
200
V - I
BE(sat)
10
5
3
C
COMMON EMITTER
I /I =10
C
B
Ta=25 C
2k
1k
T
500
f - I
TE
COMMON EMITTER
V =10V
CE
Ta=25 C
300
BE(sat)
1
100
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.3 1 10 30 100
0.1 3
COLLECTOR CURRENT I (mA)
C
200
50
30
TRANSITION FREQUENCY f (MHz)
10
-3-1-0.3-0.1
EMITTER CURRENT I (mA)
-10 -30 -100
E
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