KEC KTC3072D, KTC3072L Datasheet
2003. 3. 27 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3072D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
FEATURES
Low Saturation Voltage : V
CE(sat)
= 0.4V(Max)(Ic=3A)
High Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1 : hFE(1) Classification O:120 240, Y:200 400, GR:350 700
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
7 V
Collector
Current
DC
I
C
5
A
Pulse (Note1)
I
CP
8
Collector Power Dissipation
P
C
1.0 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note 1: Pulse Width 100mS, Duty Cycle 30%
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Base Breakdown Voltage
V
(BR)CBO
IC=100 A, IE=0
40 - - V
Collector Emitter Breakdown Voltage (1)
V
(BR)CEO
IC=1mA, IB=0
20 - - V
Emitter Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
7 - - V
Collector Cutoff Current
I
CBO
VCB=20V, IE=0
- - 100 nA
Emitter Cutoff Current
I
EBO
VEB=7V, IC=0
- - 100 nA
DC Current Gain
hFE(1)(Note1) VCE=2V, IC=0.5A
120 - 700
hFE(2) VCE=2V, IC=2A
100 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=3A, IB=60mA(Pulse)
- - 0.4 V
Transition Frequency
f
T
VCE=6V, IC=50mA
20 100 - MHz
Collector Output Capacitance
C
ob
VCB=20V, f=1MHz, IE=0
- - 50 pF
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
A
C
K
F
D
B
E
I
M
P
DPAK
J
O
L
DIM MILLIMETERS
A
B
C
D
E
F
H
I
J
K
L
_
6.60 0.2
+
_
6.10 0.2
+
_
5.0 0.2
+
_
1.10 0.2
+
_
2.70 0.2
+
_
2.30 0.1
+
1.00 MAX
_
2.30 0.2
+
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
_
+
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
_
+
6.60 0.2
_
+
6.10 0.2
_
+
5.0 0.2
_
+
1.10 0.2
_
+
9.50 0.6
_
+
2.30 0.1
_
+
0.76 0.1
1.0 MAX
_
+
2.30 0.2
_
+
0.5 0.1
_
+
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
Q
H
G
A
C
F
F
123
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
2003. 3. 27 2/3
KTC3072D/L
Revision No : 3
Pc - Ta
1.6
C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
COLLECTOR POWER DISSIPATION P (W)
04020
8
V =10V
CE
7
C
Ta=25 C
6
5
4
3
2
1
COLLECTOR CURRENT I (A)
0
Ta=25 C
60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
I - V
0.40.20
BEC
0.6 0.8 1.0 1.2
I - V
3.4
3.2
C
2.8
2.4
2.0
1.6
1.2
0.8
0.4
COLLECTOR CURRENT I (A)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
8
7
C
6
5
4
3
2
1
COLLECTOR CURRENT I (A)
0
0 0.2 0.4
0.8 1.2 1.6 2.0 2.4 2.8
0.4
I - V
C
CEC
Ta=25 C
7mA
6mA
5mA
4mA
3mA
2mA
I =1mA
B
CE
CE(sat)
I /I =30
C B
Ta=25 C
0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
800
700
FE
600
500
400
300
200
DC CURRENT GAIN h
100
0
0.01 0.03
COLLECTOR CURRENT I (A)
BE
FE C
V =2V
CE
Ta=25 C
0.1 0.3 1 3 10
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V (V)
f - Ih - I
T
400
T
300
200
100
0
TRANSITION FREQUENCY f (MHz)
EMITTER CURRENT I (A)
CE(sat)
E
V =6V
CE
Ta=25 C
10310.30.10.030.01
E
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