KEC KTC2983L, KTC2983D Datasheet
2003. 3. 27 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC2983D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : fT=100MHz(Typ.).
Complementary to KTA1225D/L.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
160 V
Collector-Emitter Voltage
V
CEO
160 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
1.5 A
Base Current
I
B
1.0 A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=160V, IE=0
- - 1.0
A
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 1.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=10mA, IB=0
160 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=1mA, IC=0
5.0 - - V
DC Current Gain
hFE(Note) VCE=5V, IC=100mA
70 - 240
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=500mA, IB=50mA
- - 1.5 V
Base-Emitter Voltage
V
BE
VCE=5V, IC=500mA
- - 1.0 V
Transition Frequency
f
T
VCE=10V, IC=100mA
- 100 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 25 - pF
Note : hFEClassification O:70~140, Y:120~240
A
C
Q
H
F
123
K
F
1. BASE
2. COLLECTOR
3. EMITTER
D
B
E
I
M
P
DPAK
J
O
L
DIM MILLIMETERS
A
B
C
D
E
F
H
I
J
K
L
_
+
6.60 0.2
_
6.10 0.2
+
_
5.0 0.2
+
_
+
1.10 0.2
_
+
2.70 0.2
_
+
2.30 0.1
1.00 MAX
_
+
2.30 0.2
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
_
+
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
Q
H
G
A
C
F
F
123
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
_
+
6.60 0.2
_
+
6.10 0.2
_
+
5.0 0.2
_
+
1.10 0.2
_
+
9.50 0.6
_
+
2.30 0.1
_
+
0.76 0.1
1.0 MAX
_
+
2.30 0.2
_
+
0.5 0.1
_
+
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
2003. 3. 27 2/3
KTC2983D/L
Revision No : 3
I - V
CCE
1.0
0.8
C
20mA
8mA
12mA
0.6
0.4
I =2mA
B
0.2
COLLECTOR CURRENT I (A)
0
0246
810121416
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat)
1
COMMON EMITTER
I /I =10
B
C
0.5
0.3
CE(sat)
0.1
VOLTAGE V (V)
0.05
0.03
COLLECTOR-EMITTER SATURATION
0.01 0.03 0.1 0.3
6mA
4mA
0mA
Tc=100 C
C
COMMON
EMITTER
Tc=25 C
CE
Tc=25 C
Tc=-25 C
h - I
CFE
300
Tc=100 C
FE
Tc=25 C
100
Tc=-25 C
50
30
DC CURRENT GAIN h
COMMON EMITTER
V =5V
CE
10
0.003 31
0.01 0.03 0.1 0.3
COLLECTOR CURRENT I (A)
I - V
C
BE
C
1.0
COMMON
EMITTER
0.8
C
0.6
0.4
V =5V
CE
C
Tc=100
Tc=25 C
Tc=-25 C
0.2
COLLECTOR CURRENT I (A)
0
130.003
0.20
0.4 0.6 0.8 1.0 1.2 1.4
COLLECTOR CURRENT I (A)
f - I
TC
300
T
100
50
30
TRANSITION FREQUENCY f (MHz)
0
0.005
0.01
0.03
COLLECTOR CURRENT I (A)
C
COMMON EMITTER
V =10V
CE
Tc=25 C
0.1 0.3 1
C
BASE-EMITTER VOLTAGE V (V)
Pc - Ta
30
C
25
20
15
10
COLLECTOR POWER DISSIPAZTION P (W)
1
5
2
0
0
20 40
60 80 100 120 140 160 180
AMBIENT TEMPERATURE Ta ( C)
BE
1
2
Tc=25 C
Ta=25 C
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