SEMICONDUCTOR
KTC2026
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
ᴌLow Collector Saturation Voltage
: V
ᴌComplementary to KTA1046.
MAXIMUM RATING (Ta=25ᴱ)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
=1.0V(Max.) at IC=2A, IB=0.2A.
CE(sat)
CHARACTERISTIC SYMBOL RATING UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B
Ta=25ᴱ
P
C
Tc=25ᴱ
T
j
T
stg
-55ᴕ150
60 V
60 V
7 V
3 A
0.5 A
2
20
150
W
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
A
U
E
L
K
D
N
T
O
1
F
B
G
L
M
J
D
N
T
3
2
Q
C
P
S
T
V
1. BASE
2. COLLECTOR
3. EMITTER
MILLIMETERS
DIM
10.30 MAX
A
15.30 MAX
B
C
2.70Ź0.30
D
0.85 MAX
Ѹ3.20Ź0.20
E
F
3.00Ź0.30
12.30 MAX
G
0.75 MAX
H
R
H
13.60Ź0.50
J
K
3.90 MAX
L
M
N
4.50Ź0.20
O
P
2.60Ź0.20
Q
R
S
T
U
V
2.60Ź0.15
TO-220IS
1.20
1.30
2.54
6.80
10Ɓ
25Ş
5Ş
0.5
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching Time
Storage Time
Fall Time
Note : hFEClassification Y:100ᴕ200, GR:150ᴕ300
I
CBO
I
EBO
V
(BR)CEO
hFE(Note) VCE=5V, IC=0.5A
V
CE(sat)
V
BE
f
T
C
ob
t
on
t
stg
t
f
VCB=60V, IE=0
VEB=7V, IC=0
IC=50mA, IB=0
IC=2A, IB=0.2A
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
20µsec
I
B1
I =-I =0.2A
B2
B1
DUTY CYCLE
I
<
=
INPUT
B2
1%
I
B1
I
B2
OUTPUT
15Ω
V =30V
CC
- - 100
- - 100
60 - - V
100 - 300
- 0.25 1.0 V
- 0.7 1.0 V
- 30 - MHz
- 35 - pF
- 0.65 -
- 1.3 -
- 0.65 -
ỌA
ỌA
ỌS
2000. 3. 7 1/2
Revision No : 3
KTC2026
I - V
3.0
2.5
C
2.0
1.5
1.0
0.5
COLLECTOR CURRENT I (A)
300
FE
100
DC CURRENT GAIN h
90
80
70
I =10mA
B
0
0
12345678
COLLECTOR-EMITTER VOLTAGE V (V)
Tc=100 C
25 C
=
Tc
-25 C
Tc=
50
30
10
0.02 0.05 0.1 0.3
COLLECTOR CURRENT I (A)
60
50
40
30
COMMON EMITTER
Tc=25 C
0
h - I
FE
CEC
20
CE
C
COMMON EMITTER
V =5V
CE
13
C
Pc - Ta
40
C
35
30
1
25
20
2
3
15
4
5
10
6
7
5
COLLECTOR POWER DISSIPATION P (W)
8
0
0
25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE Ta ( C)
Tc=Ta
1
INFINITE HEAT SINK
2
300x300x2mm Al
HEAT SINK
3
200x200x2mm Al
HEAT SINK
4
100x100x1mm Al
HEAT SINK
5
100x100x1mm Fe
HEAT SINK
6
50x50x1mm Al
HEAT SINK
7
50x50x1mm Fe
HEAT SINK
8
NO HEAT
SINK
SAFE OPERATING AREA
10
I MAX.(PULSED)*
C
5
I MAX.
C
C
(CONTINUOUS)
3
DC
O
PE
R
1
0.5
0.3
COLLECTOR CURRENT I (A)
10
SINGLE NONREPETITIVE
*
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0.1
1 3 10 100
AT
1mS*
10mS*
10
0
mS*
IO
N
CEO
V MAX.
30550
V - I
CE(sat) C
COLLECTOR-EMITTER VOLTAGE V (V)
CE
1
COMMON EMITTER
I /I =10
C
0.5
B
0.3
CE(sat)
0.1
VOLTAGE V (V)
0.05
0.03
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (A)
2000. 3. 7 2/2
C
100
c=
T
Tc=25 C
Tc=-25 C
Revision No : 3
10.30.1 5
C
1030.050.02