KEC KTC2025D, KTC2025L Datasheet

2003. 3. 27 1/2

SEMICONDUCTOR

TECHNICAL DATA

KTC2025D/L

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 3

LOW FREQUENCY POWER AMP,

MEDIUM SPEED SWITCHING APPLICATIONS

FEATURES

High breakdown voltage V

CEO

120V, high current 1A.

Low saturation voltage and good linearity of hFE.

Complementary to KTA1045D/L

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

(Note) : hFE(1) Classification Y:100 200, GR:160 320

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

120 V

Collector-Emitter Voltage

V

CEO

120 V

Emitter-Base Voltage

V

EBO

5 V

Collector Current

I

C

1

A

I

CP

2

Collector Power

Dissipation

Ta=25

P

C

1.0 W

Tc=25

8

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut of Current

I

CBO

VCB=50V, IE=0

- - 1

A

Emitter Cut of Current

I

EBO

VEB=4V, IC=0

- - 1

A

Collector-Base Breakdown Voltage

V

(BR)CBO

IC=10 A, IE=0

120 - - V

Collector-Emitter Breakdown Voltage

V

(BR)CEO

IC=1mA, IB=0

120 - - V

Emitter-Base Breakdown Voltage

V

(BR)EBO

IE=10 A, IC=0

5 - - V

DC Current Gain

hFE(1) Note VCE=5V, IC=50mA

100 - 320

hFE(2) VCE=5V, IC=500mA

20 - -

Gain Bandwidth Product

f

T

VCE=10V, IC=50mA

- 130 - MHz

Output Capacitance

C

ob

VCB=10V, IE=0, f=1MHz

- 20 - pF

Collector-Emitter Saturation Voltage

V

CE(sat)

IC=500mA, IB=50mA

- 0.15 0.4 V

Base-Emitter Saturation Voltage

V

BE(sat)

IC=500mA, IB=50mA

- 0.85 1.2 V

Switching Time

Turn-on Time

t

on

- 100 -

nS

Turn-off Time

t

off

- 500 -

Storage Time

t

stg

- 700 -

A

C

Q

H

F

123

1. BASE

2. COLLECTOR

3. EMITTER

K

F

A C

Q

H

G

F

F

123

I

J

D

B

M

E

P

DIM MILLIMETERS

A

B

C

D

E F

H

I

O

J

K

L

L

6.60 0.2

6.10 0.2

5.0 0.2

1.10 0.2

2.70 0.2

2.30 0.1

1.00 MAX

2.30 0.2

0.5 0.1

2.00 0.20

0.50 0.10

0.91 0.10M

0.90 0.1O

1.00 0.10P

0.95 MAXQ

_

+ _

+

_

+

_

+ _

+ _

+

_

+

_

+ _

+ _

+

_

+

_

+

_

+

DPAK

I

J

D

B

K

E

P

L

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K 2.0 0.2

L

P

Q

6.60 0.2

6.10 0.2

5.0 0.2

1.10 0.2

9.50 0.6

2.30 0.1

0.76 0.1

1.0 MAX

2.30 0.2

0.5 0.1

0.50 0.1

1.0 0.1

0.90 MAX

_

+ _

+

_

+

_

+ _

+ _

+ _

+

_

+

_

+ _

+

_

+

_

+

1Ω1

20u sec

100Ω

1uF 1uF

-2V

V =12V

CE

I =10I =-10I =500mA

C B1 B2

1. BASE

2. COLLECTOR

3. EMITTER

IPAK

I

B1

I

B2

12V

24Ω

2003. 3. 27 2/2

KTC2025D/L

Revision No : 3

I - V

C

1.6

Tc=25 C

1.4

C

1.2

1.0

0.8

0.6

0.4

0.2

COLLECTOR CURRENT I (A)

0

1 23456

0

COLLECTOR-EMITTER VOLTAGE V (V)

V - I

1.4

1.2

C

1.0

0.8

0.6

0.4

0.2

COLLECTOR CURRENT I (A)

V =5V

CE

0

0

0.2 0.4 0.6 0.8 1.0 1.2

BASE-EMITTER VOLTAGE V (V)

C - V

200

ob

f=1MHz

100

50

30

CE

ob CB

I =0mA

B

CBE

BE

V - I

CE(sat) C

1.0

I /I =10

C

B

20

15

12

10

8

6

4

2

CE

0.5

0.3

CE(sat)

0.1

0.05

0.03

VOLTAGE V (V)

0.01

COLLECTOR EMITTER SATURATION

1 3 10 30

100 300 1k 3k

COLLECTOR CURRENT I (mA)

C

Pc - Ta

10

C

1

8

6

4

2

2

COLLECTOR DISSIPATION P (W)

0

0

20 40 60 80 100 120 140 160

AMBIENT TMMPERATURE Ta ( C)

Tc=25 C

1

2

Ta=25 C

10

OUTPUT CAPACITANCE C (pF)

5

FE

500

300

0.05

COLLECTOR-BASE VOLTAGE V (V)

V =5V

CE

31

h - I

FE C

10 30 100

CE

SAFE OPERATING AREA

5 3

I MAX.(PULSED)

C

I MAX. (CONTINUOUS)

C

C

1

0.5

0.3

*

DC OPERATION

Tc=25 C

1mS*

10mS*

100µS

*

100

50

30

DC CURRENT GAIN h

10

313010

COLLECTOR CURRENT I (mA)

100 300 1k 5k

C

0.1

0.05

SINGLE NONREPETITIVE

*

PULSE Tc=25 C

0.03

CURVES MUST BE DERATED LINEARLY WITH INCREASE

0.01

0.005

IN TEMPERATURE

COLLECTOR CURRENT I (A)

101

COLLECTOR-EMITTER VOLTAGE V (V)

100

CE

CEO

V MAX.

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