2003. 3. 27 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2022D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector-Emitter Saturation Voltage
: V
CE(sat)
=-2.0V(Max.).
Complementary to KTA1042D/L.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification 0:70~140, Y:120~240.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
100 V
Collector-Emitter Voltage
V
CEO
100 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
5 A
Base Current
I
B
0.5 A
Collector Power Dissipation (Tc=25 )
P
C
20 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=100V, IE=0
- - 100
A
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 1.0 mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=50mA, IB=0
100 - - V
DC Current Gain
hFE(1) (Note) VCE=5V, IC=1A
70 - 240
hFE(2) VCE=5V, IC=4A
20 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=4A, IB=0.4A
- - 2.0 V
Base-Emitter Voltage
V
BE
VCE=5V, IC=1A
- - 1.5 V
Transition Frequency
f
T
VCE=5V, IC=1A
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 40 - pF
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
Q
H
G
123
A
C
K
F
A
C
F
F
I
J
D
B
M
E
P
DIM MILLIMETERS
A
B
C
D
E
F
H
I
O
J
K
L
L
_
6.60 0.2
+
_
6.10 0.2
+
_
5.0 0.2
+
_
1.10 0.2
+
_
2.70 0.2
+
_
2.30 0.1
+
1.00 MAX
_
2.30 0.2
+
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
_
+
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
DPAK
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
_
+
6.60 0.2
_
+
6.10 0.2
_
+
5.0 0.2
_
+
1.10 0.2
_
+
9.50 0.6
_
+
2.30 0.1
_
+
0.76 0.1
1.0 MAX
_
+
2.30 0.2
_
+
0.5 0.1
_
+
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
2003. 3. 27 2/2
KTC2022D/L
Revision No : 4
I - V
CCE
5.0
300
250
C
4.0
3.0
2.0
1.0
COLLECTOR CURRENT I (A)
0
0
1.0 2.0 3.0 4.0 5.0 6.0
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
500
300
FE
100
50
30
DC CURRENT GAIN h
COMMON EMITTER
V =5V
CE
10
0.01
0.03 0.1 0.3 1 3 10
Tc=75 C
Tc=25 C
Tc=-25 C
COLLECTOR CURRENT I (A)
200
COMMON EMITTER
Tc=25 C
FE C
C
150
100
I =20mA
B
CE
V - I
CE(sat) C
2
COMMON EMITTER
I /I =10
C
B
1
0.5
50
0.3
CE(sat)
Tc=25 C
0.1
Tc=75 C
Tc=-25 C
VOLTAGE V (V)
0
0.05
0.03
COLLECTOR-EMITTER SATURATION
0.30.10.030.01
COLLECTOR CURRENT I (A)
1310
C
SAFE OPERATING AREA
20
I MAX.(PULSED)
C
10
I MAX.
C
(CONTINUOUS)
5
C
3
DC OPERATION
1
0.5
SINGLE NONREPETITIVE
*
0.3
COLLECTOR CURRENT I (A)
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0.1
2 5 10 30
Tc=25 C
*
100mS
10mS
*
*
1mS
*
CEO
V MAX.
100 300
COLLECTOR-EMITTER VOLTAGE V (V)
CE
Pc - Ta
24
20
1
16
12
C
P (W)
8
4
COLLECTOR POWER DISSIPATION
2
0
25 50 75 100 125 150
0
AMBIENT TEM
PERATURE Ta ( C)
Tc=25 C
1
2
Ta=25 C