KEC KTC2016 Datasheet
SEMICONDUCTOR
KTC2016
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
ᴌLow Saturation Voltage
: V
ᴌComplementary to KTA1036.
MAXIMUM RATINGS (Ta=25ᴱ)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector
Power Dissipation
Junction Temperature
Storage Temperature Range
=1.0V(Max.) (IC=2A, IB=0.2A).
CE(sat)
CHARACTERISTIC SYMBOL RATING UNIT
V
CBO
V
CEO
V
EB0
I
C
I
B
Ta=25ᴱ
Tc=25ᴱ
P
C
T
j
T
stg
-55ᴕ150
60 V
60 V
7 V
3 A
0.5 A
2
30
150
W
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
A
R
S
E
D
Q
H
L
C
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
F
B
G
C
N
O
P
DIM MILLIMETERS
10.30 MAX
A
B
15.30 MAX
C
Φ3.60 0.20
D
T
E
F
13.60 0.50
G
H
J
K
L
M
N
O
P
Q1.50
R 9.50 0.20
S 8.00 0.20
T 2.90 MAX
0.80
_
+
3.00
6.70 MAX
_
+
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
_
+
_
+
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching
Time
Storage Time
Fall Time
Note : h
Classification Y:100ᴕ200, GR:150ᴕ300
FE
I
CBO
I
EBO
V
(BR)CEO
h
(Note) VCE=5V, IC=0.5A
FE
V
CE(sat)
V
BE
f
T
C
ob
t
on
t
stg
t
f
VCB=60V, IE=0
VEB=7V, IC=0
IC=50mA, IB=0
IC=2A, IB=0.2A
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
20µsec
I
B1
I =-I =0.2A
B2
B1
DUTY CYCLE
I
<
=
INPUT
B2
1%
I
I
- - 100
- - 100
ỌA
ỌA
60 - - V
100 - 300
- 0.25 1.0 V
- 0.7 1.0 V
- 30 - MHz
- 35 - pF
OUTPUT
B1
B2
15Ω
V =30V
CC
- 0.65 -
- 1.3 -
- 0.65 -
ỌS
2000. 3. 7 1/2
Revision No : 4
KTC2016
3.0
2.5
C
90
80
70
2.0
1.5
I =10mA
B
1.0
0.5
COLLECTOR CURRENT I (A)
0
0
12345678
COLLECTOR-EMITTER VOLTAGE V (V)
300
C
0
FE
100
Tc=10
Tc=25 C
Tc=
5 C
2
-
50
30
DC CURRENT GAIN h
10
0.02 0.05 0.1 0.3
COLLECTOR CURRENT I (A)
I - V
60
50
40
30
COMMON EMITTER
Tc=25 C
0
h - I
FE
CEC
20
CE
C
COMMON EMITTER
V =5V
CE
1310
C
Pc - Ta
40
35
C
1
30
25
20
2
3
15
4
5
10
6
7
5
COLLECTOR POWER DISSIPATION P (W)
8
0
0
25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE Ta ( C)
Tc=Ta
1
INFINITE HEAT SINK
2
300x300x2mm Al
HEAT SINK
3
200x200x2mm Al
HEAT SINK
4
100x100x1mm Al
HEAT SINK
5
100x100x1mm Fe
HEAT SINK
6
50x50x1mm Al
HEAT SINK
7
50x50x1mm Fe
HEAT SINK
SAFE OPERATING AREA
10
I MAX(PULSED)
C
5
I MAX(CONTINUOUS)
C
C
3
1
0.5
0.3
COLLECTOR CURRENT I (A)
SINGLE NONREPETITIVE
*
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
0.1
COLLECTOR-EMITTER VOLTAGE V (V)
*
100mS
D
C
O
PE
T
R
c=
ATION
25
C
10550
8
10mS
*
NO HEAT
SINK
1m
S
*
*
1s
*
CE
CEO
V MAX.
1003031
V - I
CE(sat) C
1
COMMON EMITTER
I /I =10
C
0.5
B
0.3
CE(sat)
0.1
VOLTAGE V (V)
0.05
0.03
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (A)
2000. 3. 7 2/2
00 C
1
c=
T
Tc=25 C
Tc=-25 C
Revision No : 4
10.30.1 5
C
1030.050.02
Loading...