KEC KTC1804L, KTC1804D Datasheet
2003. 3. 27 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTC1804D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH CURRENT SWITCHING APPLICATION.
APPLICATION
Relay drivers, high-speed inverters, converters, and other
general high-current switching applications.
FEATURES
Low Collector Emitter Saturation Voltage.
: V
CE(sat)
=0.4V(Max.) (IC=4A)
High Current and High f
T
: IC=8A, fT=180MHz.
Excellent Linearity of h
FE
High Speed Switching Time.
: f
T
=20nS (Typ.)
Complementary to KTA1204D/L
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltag
V
EBO
6 V
Collector Current
DC
I
C
8
A
Pulse
I
CP
12
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
A
C
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
K
F
I
J
D
B
M
E
P
DIM MILLIMETERS
A
B
C
D
E
F
H
I
O
J
K
L
L
_
6.60 0.2
+
_
6.10 0.2
+
_
5.0 0.2
+
_
1.10 0.2
+
_
2.70 0.2
+
_
2.30 0.1
+
1.00 MAX
_
2.30 0.2
+
_
0.5 0.1
+
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
_
+
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
DPAK
A
C
Q
H
G
F
F
123
1. BASE
2. COLLECTOR
3. EMITTER
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
_
+
6.60 0.2
_
+
6.10 0.2
_
+
5.0 0.2
_
+
1.10 0.2
_
+
9.50 0.6
_
+
2.30 0.1
_
+
0.76 0.1
1.0 MAX
_
+
2.30 0.2
_
+
0.5 0.1
_
+
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
IPAK
2003. 3. 27 2/4
KTC1804D/L
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFEClassification O:100~200, Y:140~280, GR:200~400.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=40V, IE=0
- - 1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 1
A
DC Current Gain
h
FE
(1) (Note) VCE=2V, IC=0.5A
100 - 400
h
FE
(2) VCE=2V, IC=6A
35 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=4A, IB=0.2A
- 200 400 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=4A, IB=0.2A
- 0.95 1.3 mV
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
60 V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA, RBE=
50 V
Emitter-base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
6 - - V
Gain-Bandwidth Product
f
T
VCE=5V, IC=1A
- 180 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 65 - pF
Switching
Time
Turn On Time
t
on
- 50 -
nS
Storage Time
t
stg
- 500 -
Fall Time
t
f
- 20 -
20µsec
I
B1
I =-I =0.4A
B2
B1
DUTY CYCLE
I
B2
<
1%
=
INPUT
OUTPUT
I
B1
V =25V
CC
6.25Ω
I
B2
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