KEC KTB988 Datasheet
SEMICONDUCTOR
KTB988
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
ᴌLow Collector Saturation Voltage
: V
ᴌCollector Power Dissipation
: P
ᴌComplementary to KTD1351.
MAXIMUM RATING (Ta=25ᴱ)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
=-1.0V(Max.) at IC=-3A, IB=-0.3A.
CE(sat)
=30W (Tc=25ᴱ).
C
CHARACTERISTIC SYMBOL RATING UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B
Ta=25ᴱ
Tc=25ᴱ
P
C
T
j
T
stg
-60 V
-60 V
-7 V
-3 A
-0.5 A
2.0
30
150
-55ᴕ150
W
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
A
R
S
E
D
Q
H
L
C
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
F
B
G
C
N
O
P
DIM MILLIMETERS
10.30 MAX
A
B
15.30 MAX
C
Φ3.60 0.20
D
T
E
F
13.60 0.50
G
H
J
K
L
M
N
O
P
Q1.50
R 9.50 0.20
S 8.00 0.20
T 2.90 MAX
0.80
_
+
3.00
6.70 MAX
_
+
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
_
+
_
+
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
I
I
V
(BR)CEO
CBO
EBO
hFE(1) (Note) VCE=-5V, IC=-0.5A
DC Current Gain
hFE(2) VCE=-5V, IC=-3A
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching Time
Storage Time
Fall Time
V
CE(sat)
V
BE
f
T
C
ob
t
on
t
stg
t
f
Note : hFE(1) Classification O:60ᴕ120 , Y:100ᴕ200 , GR:150ᴕ300
VCB=-60V, IE=0
VEB=-7V, IC=0
IC=-50mA, IB=0
IC=-3A, IB=-0.3A
VCE=-5V, IC=-0.5A
VCE=-5V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
I
B2
0
I
B1
20µsec
-I =I =0.2A
B2
B1
DUTY CYCLE
<
1%
=
INPUT
- - -100
- - -100
ỌA
ỌA
-60 - - V
60 - 300
20 - -
- -0.5 -1.0 V
- -0.7 -1.0 V
- 9 - MHz
- 150 - pF
OUTPUT
I
B1
I
B2
15Ω
V =-30V
CC
- 0.4 -
- 1.7 -
- 0.5 -
ỌS
1996. 12. 18 1/2
Revision No : 1
KTB988
I - V
C
-3
C
-80
-70
-2
-1
COMMON
EMITTER
COLLECTOR CURRENT I (A)
Tc=25 C
0
-1 -2
-3 -4 -5 -6
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
FE C
500
Tc=100 C
Tc=25 C
Tc=-25 C
FE
300
100
DC CURRENT GAIN h
50
COMMON
EMITTER
V =-5V
CE
30
-0.02
-0.1 -0.3 -1 -3
COLLECTOR CURRENT I (A)
CE
-60
-50
I =-10mA
C
R - t
th(t)
100
-40
-30
-20
B
0
th(t)
R ( C/W)
TRANSIENT THERMAL RESISTANCE
CE
(1) WITHOUT HEAT SINK
(2) INFINITE HEAT SINK
10
1
0.1
-3 -2
10 10
(1) Ta=2
-1
TIME t (sec)
5 C
(2) Tc=25
1010 1
C
2
10
Pc - Ta
Tc=Ta
1
40
C
1
30
20
2
3
4
5
10
8
7
COLLECTOR POWER DISSIPATION P (W)
0
INFINITE HEAT SINK
2
300x300x2mm Al
HEAT SINK
3
200x200x2mm Al
HEAT SINK
4
100x100x1mm Al
HEAT SINK
5
100x100x1mm Fe
HEAT SINK
6
50x50x1mm Al
HEAT SINK
7
6
50x50x1mm Fe
HEAT SINK
8
NO HEAT SINK
100 200
150500
AMBIENT TEMPERATURE Ta ( C)
SAFE OPERATING AREA
-0.5
C
-0.5
-0.3
COLLECTOR CURRENT I (A)
-0.1
1996. 12. 18 2/2
I MAX(PULSED)
C
100ms
DC OPE
10ms
1s
RATION
-5
-3
I MAX
C
(CONTINUOUS)
Tc=25 C
-1
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH
TEMPERATURE
INCREASE IN
-5-1
-3 -10 -30 -50 -100
COLLECTOR-EMITTER VOLTAGE V (V)
Revision No : 1
1m
V - I
CE(sat)
s
-1
COMMON EMITTER
I /I =10
C
-0.5
B
C
-0.3
CE
CEO
V (MAX)
CE(sat)
-0.1
-0.05
VOLTAGE V (V)
-0.02
COLLECTOR-EMITTER SATURATION
-0.02
-0.
1
COLLECTOR CURRENT I (A)
0 C
=10
c
T
T
c=25
C
Tc=-25 C
-0.3 -1 -3 1
C
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