KEC KTB985 Datasheet
SEMICONDUCTOR
KTB985
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
ᴌAdoption of MBIT processes.
ᴌLow collector-to-emitter saturation voltage.
ᴌFast switching speed.
ᴌLarge current capacity and wide ASO.
ᴌComplementary to KTD1347.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
-55ᴕ150
-60 V
-50 V
-6 V
-3 A
-6 A
1 W
150
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
B
P
DEPTH:0.2
C
Q
FF
HH
M
123
O
K
E
NN
1. EMITTER
2. COLLECTOR
3. BASE
G
M
D
A
J
R
D
L
H
DIM MILLIMETERS
A
B
C
S
D
E
F
G
H
J
K
H
L
M
N
O
P
Q
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 0.50
+
0.35 MIN
_
+
0.75 0.10
4
25
1.25
Φ1.50
0.10 MAX
_
+
12.50 0.50R
1.00S
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching
Time
Storage Time
Fall Time
Note : h
(1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400
FE
I
CBO
I
EBO
h
(1) (Note)
FE
h
(2) VCE=-2V, IC=-3A
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-100Ὠ
IC=-2A, IB=-100Ὠ
IC=-2A, IB=-100Ὠ
VCE=-10V, IC=-50Ὠ
VCB=-10V, IE=0, f=1ὲ
PW=20µs
<
DC 1%
=
INPUT
-10I 1=10I =I =1A
I
B1
R8
VR
50
5V
BB2C
I
B2
100Ω
470Ω
-25V
- - -1
- - -1
ὧ
ὧ
100 - 400
35 - -
- -0.35 -0.7 V
- -0.94 -1.2 V
- 150 -
- 39 -
ὲ
ὸ
- 70 -
25
- 450 -
nS
- 35 -
1999. 11. 30 1/3
Revision No : 1
KTB985
I - V
-5.0
-4.5
C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
COLLECOTR CURRENT I (A)
0
0
-0.4 -0.8 -1.2 -1.6 -2.0
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
-2.0
-1.8
C
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
COLLECTOR CURRENT I (A)
0
0-2-4-6
COLLECTOR EMITTER VOLTAGE V (V)
-14mA
-8 -10 -12
I - V
-0.4
Ta=75 C
Ta=25 C
Ta=-25 C
CBEBE
h - I
FE C
C
Ta=75
25
C
-25
C
V =-2V
CE
CEC
-200mA
-100mA
-50mA
-20mA
-10mA
-5mA
I =0
B
CE
CE
C
-12mA
-10mA
-8mA
-6mA
-4mA
-2mA
-3.2
V =-2V
CE
-2.8
C
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
COLLECTOR CURRENT I (A)
0
0
-0.2 -0.6 -0.8 -1.0 -1.2
BASE EMITTER VOLTAGE V (V)
1k
500
FE
300
100
50
30
DC CURRENT GAIN h
I =0
B
-14 -16 -18 -20
CE
10
-0.3-0.1-0.03-0.01
COLLECTOR CURRENT I (A)
-1 -3 -10
C
-1K
I /I =20
C B
-500
-300
CE(sat)
-100
-50
-30
VOLTAGE V (mV)
V - I
CE(sat) C
Ta=-25 C
Ta=75 C
Ta=25 C
-10
-5
-3
BE(sat)
-1
-0.5
Ta=25 C
-0.3
VOLTAGE V (V)
V - I
BE(sat)
Ta=-25 C
Ta=75 C
C
I /I =20
C
B
BASE-EMITTER SATURATION
-10
COLLECTOR EMITTER SATURATION
-0.01
1999. 11. 30 2/3
-0.1-0.03 -0.3 -1
COLLECTOR CURRENT I (A)
C
Revision No : 1
-3 -10
-0.1
-0.03-0.01
-0.1 -0.3 -1 -10-3
COLLECTOR CURRENT I (A)
C
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