KEC KTB764 Datasheet
SEMICONDUCTOR
KTB764
VOLTAGE REGULATOR, RELAY,
RAMP DRIVER, INDUSTRIAL USE
FEATURES
ᴌHigh Voltage : V
ᴌHigh Current : I
ᴌHigh Transition Frequency : f
ᴌWide Area of Safe Operation.
ᴌComplementary to KTD863.
=-50V(Min.).
CEO
(Max.)=-1A.
C
=150MHz(Typ.).
T
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
TECHNICAL DATA
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
-60 V
-50 V
-5 V
-1
-2
1 W
150
-55ᴕ150
A
ᴱ
ᴱ
TRIPLE DIFFUSED PNP TRANSISTOR
B
P
DEPTH:0.2
C
Q
FF
HH
M
123
O
K
E
NN
1. EMITTER
2. COLLECTOR
3. BASE
G
M
D
A
J
R
D
L
H
DIM MILLIMETERS
A
B
C
S
D
E
F
G
H
J
K
H
L
M
N
O
P
Q
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 0.50
+
0.35 MIN
_
+
0.75 0.10
4
25
1.25
Φ1.50
0.10 MAX
_
+
12.50 0.50R
1.00S
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
I
I
CBO
EBO
hFE(1) VCE=-2V, IC=-50mA
DC Current Gain
hFE(2) VCE=-2V, IC=-1A
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
(BR)CEO
V
CE(sat)
V
BE(sat)
C
f
T
ob
Note : hFE(1) Classification O:60ᴕ120, Y:100ᴕ200, GR:160ᴕ320
VCB=-50V, IE=0
VEB=-4V, IC=0
IC=-1mA, IB=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
- - -1
- - -1
ỌA
ỌA
60 - 320
30 - -
-50 - - V
- -0.2 -0.7 V
- -0.85 -1.2 V
- 150 - MHz
- 20 - pF
1999. 11. 30 1/3
Revision No : 2
KTB764
I - V
CCE
-1000
I =-10mA
B
-800
C
-600
-400
-200
COLLECTOR CURRENT I (mA)
0
0
-2 -4 -6
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
FE
1K
500
FE
300
V =-2V
CE
100
50
30
DC CURRENT GAIN h
10
-1 -3 -1K -5K
COLLECTOR CURRENT I (mA)
I =-8mA
B
I =-6mA
B
I =0mA
B
C
COMMON EMITTER
Ta=25 C
-100-10 -30 -300
-8
C
I =-4mA
B
I =-3mA
B
I =-2mA
B
I =-1mA
B
-10 -12
CE
I - V
C
-1000
-800
C
=-
B
I
50mA
B
I =-30mA
-600
-400
-200
COLLECTOR CURRENT I (mA)
0
-0.2
0
COLLECTOR-EMITTER VOLTAGE V (V)
C - V
ob CB
100
50
30
ob
C (pF)
10
5
3
COLLECTOR OUTPUT CAPACITANCE
-1
-3 -5 -10 -30 -50 -100
COLLECTOR-BASE VOLTAGE V (V)
CE
I =-20mA
B
I =-10mA
B
I =-6mA
B
I =-4mA
B
I =-2mA
B
I =0mA
B
-1.0-0.4 -0.6
-0.8
CE
COMMON EMITTER
f=1MHz
Ta=25 C
CB
-1.2
f - I
TC
300
T
COMMON EMITTER
Ta=25 C
V =-10V
CE
-1.0
COMMON EMITTER
Ta=25 C
-0.5
-0.3
V - I
CE(sat) C
100
CE(sat)
50
30
-0.1
-0.05
-0.03
0
=1
B
/I
C
I
VOLTAGE V (V)
TRANSITION FREQUENCY f (MHz)
10
-1 -3 -10 -100
COLLECTOR CURRENT I (mA)
1999. 11. 30 2/3
Revision No : 2
C
-300-30
-0.01
COLLECTOR-EMITTER SATURATION
-3 -1K-100-30 -300 -5K
-10-1
COLLECTOR CURRENT I (mA)
C
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