KEC KTB2234 Datasheet
SEMICONDUCTOR
KTB2234
TECHNICAL DATA
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
POWER SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATION.
FEATURES
ᴌ
High DC Current Gain
=200(Min.) (VCE=-2V, IC=-1A)
: h
FE
ᴌLow Saturation Voltage
: V
ᴌComplementary to KTD2854.
MAXIMUM RATINGS (Ta=25ᴱ)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
=-1.5V(Max.) (IC=-1A, IB=-1mA)
CE(sat)
CHARACTERISTIC SYMBOL RATING UNIT
DC
Peak
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
-100 V
-100 V
-8 V
-2
-3
-0.5 A
1 W
150
-55ᴕ150
A
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
B
P
DEPTH:0.2
C
Q
FF
HH
M
123
O
K
E
NN
1. EMITTER
2. COLLECTOR
3. BASE
G
M
D
A
J
R
D
L
H
DIM MILLIMETERS
A
B
C
S
D
E
F
G
H
J
K
H
L
M
N
O
P
Q
TO-92L
EQUIVALENT CIRCUIT
BASE
∼
−
4kΩ
∼
−
800Ω
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
1.15 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
25
1.25
Φ1.50
0.10 MAX
12.50 0.50R
1.00S
COLLECTOR
_
+
_
+
4
_
+
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn On Time
Switching
Time
Storage Time
Fall Time
I
I
V
(BR)CEO
h
V
CE(sat)
V
BE(sat)
C
CBO
EBO
FE
f
T
ob
t
on
t
stg
t
f
VCB=-80V, IE=0
VEB=-8V, IC=0
IC=-10mA, IB=0
VCE=-2V, IC=-1A(Pulse)
IC=-1A, IB=-1mA(Pulse)
IC=-1A, IB=-1mA(Pulse)
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
INPUT
<
1%
=
I
B1
I
B2
I
B2
0
I
B1
20µs
-I =I =1mA
B2
B1
DUTY CYCLE
OUTPUT
30Ω
V =-30V
CC
EMITTER
- - -10
- - -4 mA
-100 - - V
2000 - -
- - -1.5 V
- - -2.0 V
- 50 - MHz
- 27 - pF
- 0.4 -
- 2.0 -
- 0.4 -
ỌA
ỌS
2001. 10. 23 1/3
Revision No : 0
KTB2234
I - V
-4
COMMON EMITTER
C
COLLECTOR CURRENT I (A)
Ta=25 C
-3
-2
-1
0
0
-1 -2 -3 -4 -5
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
-5
COMMON EMITTER
I /I =1000
C B
-3
FE C
CE
C
h - I
10K
-1000µA
-800µA
I =-200µA
B
-500
µA
-400
0
-30
-250µA
µA
µA
FE
3K
1K
500
300
DC CURRENT GAIN h
Ta=100 C
Ta=25
Ta=
C
-55 C
COMMON EMITTER
V =-2V
CE
100
-0.3-0.1-0.03 - 1 -3 -10
CE
-5
-3
COLLECTOR CURRENT I (A)
V - I
BE(sat) C
COMMON EMITTER
I /I =1000
CB
C
CE(sat)
-1
Ta=25 C
VOLTAGE V (V)
-0.5
-0.3
COLLECTOR-EMITTER SATURATION
Ta=-55 C
00
1
=
Ta
C
-0.5 -3-1-0.3-0.2
COLLECTOR CURRENT I (A)
I - V
C
-3.0
COMMON EMITTER
V =-2V
-2.5
C
CE
-2.0
-1.5
25
=
Ta=100 C
-1.0
Ta
BE
C
-55
Ta=
Ta=-55 C
BE(sat)
-1
VOLTAGE V (V)
-0.5
Ta=25 C
a=100
T
C
BASE-EMITTER SATURATION
-0.3
-0.5 -3-1-0.3-0.2
C
COLLECTOR CURRENT I (A)
C
Pc - Ta
1200
1000
800
C
600
C
P (mW)
400
-0.5
200
COLLECTOR CURRENT I (A)
COLLECTOR POWER DISSIPATION
0
0
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -3.0
BASE-EMITTER VOLTAGE V (V)
2001. 10. 23 2/3
Revision No : 0
BE
0
0
40 80 120 160 200
AMBIENT TEMPERATURE Ta ( C)
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