KEC KTB1772 Datasheet
SEMICONDUCTOR
KTB1772
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
ᴌComplementary to KTD1882.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse (Note)
Base Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note : Pulse Width ⏊10mS, Duty Cycle⏊50%.
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
-40 V
-30 V
-5 V
-3
-7
-0.6 A
625 mW
150
-55ᴕ150
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
B
K
D
F
1 2
L
E
G
H
F
C
3
M
A
AJ
1. EMITTER
2. COLLECTOR
3. BASE
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter-Cut-off Current
I
I
CBO
EBO
hFE(1) VCE=-2V, IC=-20mA
DC Current Gain *
hFE(2) (Note) VCE=-2V, IC=-1A
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Current Gain Bandwidth Product
Collector Output Capacitance
V
V
CE(sat)
BE(sat)
f
T
C
ob
* Pulse Test : Pulse Widthᴪ350ỌS, Duty Cycleᴪ2% Pulsed
Note: h
2000. 12. 8 1/2
(2) Classification O:100ᴕ200 , Y:160ᴕ320 , GR:200ᴕ400
FE
Revision No : 0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-0.2A
IC=-2V, IB=-0.2A
VCE=-5V, IC=-0.1A
VCB=-10V, IE=0, f=1MHz
- - -1
- - -1
30 220 -
100 160 400
- -0.3 -0.5 V
- -1.0 -2.0 V
- 80 - MHz
- 55 - pF
ỌA
ỌA
KTB1772
I - V
C
CE
-1.8
-1.6
C
-1.2
-1.0
-0.4
COLLECTOR CURRENT I (A)
0
0
I =-10mA
B
I =-9mA
B
I =-8mA
B
I =-7mA
B
I =-6mA
B
I =-5mA
B
I =-4mA
B
I =-3mA
B
I =-2mA
B
I =-1mA
-16-12-8 -20-4
B
COLLECTOR-EMITTER VOLTAGE V (V)
-10K
BE(sat)
-500
CE(sat),
-300
-5K
-3K
-1K
V ,V - I
CE(sat)
V (sat)
BE
BE(sat)
C
I /I =10
C B
-100
-50
-30
V (sat)
-10
-5
-3
SATURATION VOLTAGE V V (mV)
CE
-3
-1
-10
-30
-100
-300 -3K
COLLECTOR CURRENT I (mA)
C
CE
-1K
1K
500
300
FE
100
50
30
10
5
DC CURRENT GAIN h
3
1
COLLECTOR CURRENT I (mA)
1K
500
300
100
ob
50
30
10
5
3
CAPACITANCE C (pF)
1
-1
-3 -30 -100
COLLECTOR-BASE VOLTAGE V (V)
h - I
FE
C - V
ob
C
-100 -1K -3K
-300-30-1 -3 -10
CB
-10
C
V =-2V
CE
I =0
E
f=1MHz
-300 -1K
CB
f - I
T
1K
C
T
700
P - Ta
C
500
300
V =-5V
100
CE
50
30
10
5
3
1
-0.01
CURRENT GAIN BANDWIDTH PRODUCT f (MHz)
-0.03
-0.1
COLLECTOR CURRENT I (A)
2000. 12. 8 2/2
-0.3
-1
Revision No : 0
C
-10
-3
600
500
400
C
300
P (mW)
200
100
COLLECTOR POWER DISSIPATION
0
25 50 75 100 125 150
0
AMBIENT TEMPERATURE Ta ( C)
5
17
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