KEC KTB1260 Schematic [ru]
2003. 12. 12 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTB1260
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTD1898.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70 140, Y:120 240, GR:200 400
* Mounted on ceramic substrate(250mm
2
0.8t)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-60V, IE=0
- - -1
A
Emitter Cut-off Current
I
EBO
VEB=-4V, IC=0
- - -1
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA, IB=0
-80 - - V
DC Current Gain
hFE(Note) VCE=-3V, IC=-100mA
70 - 400
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-500mA, IB=-50mA
- - -0.4 V
Transition Frequency
f
T
VCE=-5V, IC=-50mA, f=30MHz
- 100 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 25 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-80 V
Collector-Emitter Voltage
V
CEO
-80 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-1 A
Emitter Current
I
E
1 A
Collector Power Dissipation
P
C
500 mW
PC*
1 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
D
FF
123
A
H
J
D
K
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
C
G
B
E
DIM
MILLIMETERS
A
4.70 MAX
_
B
C
D
E
F
G
H
J
K
+
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
+
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
Marking
h Rank
FE
Type Name
Lot No.
Q
2003. 12. 12 2/3
KTB1260
Revision No : 0
I - V
C
BE
-1K
C
-100
-10
-1
COLLECTOR CURRENT I (mA)
-0.1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
0
BASE-EMITTER VOLTAGE V (V)
h - I
FE C
1K
FE
500
200
100
50
DC CURRENT GAIN h
20
10
-1 -10 -100 -1K-2 -20 -200-5 -50 -500 -2K
COLLECTOR CURRENT I (mA)
BE
V =-3V
V =-1V
CE
C
Ta=25 C
V =-5V
CE
CE
-1.0
C
-0.8
-0.6
-0.4
-0.2
COLLECTOR CURRENT I (mA)
0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
COLLECTOR-EMITTER VOLTAGE V (V)
-2
-1
-0.5
CE(sat)
-0.2
-0.1
-0.05
VOLTAGE V (V)
COLLECTOR SATURATION
-0.02
-0.01
-1
-10
COLLECTOR CURRENT I (mA)
I - V
V - I
CE(sat)
I /I =20
C B
-20
-50
-100 -1K-2
CEC
C
I /I =10
-200-5
Ta=25 C
-0.45mA
-0.4mA
-0.35mA
-0.3mA
-0.25mA
-0.2mA
-0.15mA
-0.1mA
-0.05mA
I =0mA
B
CE
Ta=25 C
BC
-500 -2K
C
f - I
T E
1K
500
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY f (MHz)
1
1
2 5 10 20 50 100 200 500 1K
Ta=25 C
V =-5V
CE
1K
ob
500
200
100
50
20
10
5
2
1
-0.1
-0.2
C - V
ob CB
-20 -50 -100
-10-0.5 -1 -5-2
Ta=25 C
f=1MHz
I =0A
E
COLLECTOR OUTPUT CAPACITANCE C (pF)
EMITTER CURRENT I (mA)
C
COLLECTOR-BASE VOLTAGE V (V)
CB
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