KEC KTB1124 Datasheet
SEMICONDUCTOR
KTB1124
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
ᴌAdoption of MBIT processes.
ᴌLow collector-to-emitter saturation voltage.
ᴌFast switching speed.
ᴌLarge current capacity and wide ASO.
ᴌComplementary to KTD1624.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* : Package mounted on ceramic substrate(250mm2ᴧ0.8t)
V
V
V
CBO
CEO
EBO
I
I
CP
P
PC*
T
T
-60 V
-50 V
-6 V
C
-3 A
-6 A
C
j
stg
500 mW
150
-55ᴕ150
1 W
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
D
FF
123
A
H
J
D
K
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
C
G
B
E
DIM
MILLIMETERS
A
4.70 MAX
_
B
C
D
E
F
G
H
J
K
+
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
+
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
Marking
h Rank
FE
Type Name
Lot No.
X
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching
Time
Storage Time
Fall Time
Note : h
(1) Classification A:100ᴕ200, B:140ᴕ280, C:200ᴕ400
FE
I
CBO
I
EBO
hFE(1) (Note)
h
(2) VCE=-2V, IC=-3A
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-100Ὠ
IC=-2A, IB=-100Ὠ
IC=-2A, IB=-100Ὠ
VCE=-10V, IC=-50Ὠ
VCB=-10V, f=1ὲ
PW=20µs
<
DC 1%
=
INPUT
-10I 1=10I =I =1A
I
B1
VR
50
5V
BB2C
R8
I
B2
100Ω
470Ω
-25V
- - -1
- - -1
ὧ
ὧ
100 - 400
35 - -
- -0.35 -0.7 V
- -0.94 -1.2 V
- 150 -
- 39 -
ὲ
ὸ
- 70 -
25
- 450 -
nS
- 35 -
2001. 12. 6 1/3
Revision No : 3
KTB1124
I - V
-5.0
-4.5
C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
COLLECOTR CURRENT I (A)
0
0
-0.4 -0.8 -1.2 -1.6 -2.0
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
-2.0
-1.8
C
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
COLLECTOR CURRENT I (A)
0
0-2-4-6
COLLECTOR EMITTER VOLTAGE V (V)
-14mA
-8 -10 -12
I - V
C
h - I
FE C
BE
C
Ta=75
C
25
C
-25
BE
V =-2V
CE
CEC
-200mA
-100mA
-50mA
-20mA
-10mA
-5mA
I =0
B
CE
CE
C
-12mA
-10mA
-8mA
-6mA
-4mA
-2mA
-3.2
V =-2V
CE
-2.8
C
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
COLLECTOR CURRENT I (A)
0
0
-0.2 -0.6 -0.8 -1.0 -1.2
-0.4
BASE EMITTER VOLTAGE V (V)
1k
500
FE
300
Ta=75 C
Ta=25 C
Ta=-25 C
100
50
30
DC CURRENT GAIN h
I =0
B
-14 -16 -18 -20
CE
10
-0.3-0.1-0.03-0.01
COLLECTOR CURRENT I (A)
-1 -3 -10
C
-1K
I /I =20
C B
-500
-300
CE(sat)
-100
-50
-30
VOLTAGE V (mV)
V - I
CE(sat) C
Ta=-25 C
Ta=75 C
Ta=25 C
-10
-5
-3
BE(sat)
-1
-0.5
Ta=25 C
-0.3
VOLTAGE V (V)
V - I
BE(sat)
Ta=-25 C
Ta=75 C
C
I /I =20
C
B
BASE-EMITTER SATURATION
-10
COLLECTOR EMITTER SATURATION
-0.01
2001. 12. 6 2/3
-0.1-0.03 -0.3 -1
COLLECTOR CURRENT I (A)
C
Revision No : 3
-3 -10
-0.1
-0.03-0.01
-0.1 -0.3 -1 -10-3
COLLECTOR CURRENT I (A)
C
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