KEC KTA733 Datasheet
SEMICONDUCTOR
KTA733
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent hFELinearity.
=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
: h
FE(IC
ᴌLow Noise : NF=1dB(Typ.). at f=1kHz
ᴌComplementary to KTC945.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
-55ᴕ150
-60 V
-50 V
-5 V
-150 mA
625 mW
150
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. COLLECTOR
3. BASE
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
J
K
L
_
14.00 0.50
+
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
hFE(Note) VCE=-6V, IC=-2mA
V
CE(sat)
V
BE(sat)
f
T
C
ob
Noise Figure NF
Note : hFEClassification R:90ᴕ180, Q:135ᴕ270, P:200ᴕ400, K:300ᴕ600
IC=-100ỌA, IE=0
IC=-1mA, IB=0
IE=-100ỌA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
VCE=-6V, IC=-0.1mA Rg=10kή, f=1kHz
-60 - - V
-50 - - V
-5 - - V
- - -0.1
- - -0.1
ỌA
ỌA
90 - 600
- -0.1 -0.3 V
- - -1.1 V
- 300 - MHz
- 4 7 pF
- 1.0 10 dB
2001. 9. 14 1/2
Revision No : 2
KTA733
I - V
-240
-200
C
-160
-120
-80
-40
COLLECTOR CURRENT I (mA)
0
0
-1k
-500
-300
CE(sat)
-100
-2.0
-1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
CE C
COMMON EMITTER
Ta=25 C
-1.5
-1.0
-0.5
I =-0.2mA
B
0
COMMON EMITTER
I /I =10
CB
CE
3k
FE
1k
500
300
100
DC CURRENT GAIN h
50
30
-0.1
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I (mA)
3k
T
1k
500
300
h - I
FE
Ta=100 C
Ta=25 C
Ta=-25 C
f - I
T
C
COMMON
EMITTER
V =-6V
CE
C
C
COMMON EMITTER
V =-10V
CE
Ta=25 C
-50
-30
VOLTAGE V (mV)
-10
COLLECTOR-EMITTER SATURATIONBASE CURRENT I (µA)
-0.3 -1 -3 -10 -30 -100 -300
-0.1
COLLECTOR CURRENT I (mA)
-1k
COMMON EMITTER
V =-6V
-300
-100
B
CE
-30
-10
-3
-1
-0.3
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0
BASE-EMITTER VOLTAGE V (V)
Ta=100 C
I - V
BBE
C
0
Ta=25 C
Ta=10
Ta=-25
Ta=25 C
Ta=-25 C
C
C
BE
100
50
30
TRANSITION FREQUENCY f (MHz)
-0.1
COLLECTOR CURRENT I (mA)
Pc - Ta
700
600
500
400
300
C
P (mW)
200
100
COLLECTOR POWER DISSIPATION
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
-300-100-30-10-3-1-0.3
C
2001. 9. 14 2/2
Revision No : 2
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