KEC KTA701E Datasheet
2003. 2. 25 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA701E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
A super-minimold package houses 2 transistor.
Excellent temperature response between these 2 transistor.
High pairing property in hFE.
The follwing characteristics are common for Q1, Q2.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-150 mA
Base Current
I
B
-30 mA
Collector Power Dissipation
PC *
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -0.1
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
DC Current Gain
h
FE
(Note)
VCE=-6V, IC=-2
120 - 400
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-100 , IB=-10
- -0.1 -0.30 V
Transition Frequency
f
T
VCE=-10V, IC=-1
80 - -
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1
- 4 7
Noise Figure NF
VCE=-6V, IC=-0.1 , f=1 , Rg=10
- 1.0 10
* Total Rating
Note : hFEClassification Y(4):120 240, GR(6):200 400
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
B
B1
C
A
A1
C
H
1. Q EMITTER
1
2. Q BASE
1
3. Q COLLECTOR
2
4. Q EMITTER
2
5. Q BASE
2
6. Q COLLECTOR
1
1
2
3
P
6
DIM MILLIMETERS
5
D
4
P
J
_
A
1.6 0.05
+
_
A1
1.0 0.05
+
_
1.6 0.05
+
B
_
B1
1.2 0.05
+
C
0.50
_
+
0.2 0.05
D
_
+
0.5 0.05
H
_
+
0.12 0.05
J
P5
TES6
654
Q1 Q2
1
23
Type Name
46
5
h Rank
S
FE
123
2003. 2. 25 2/3
KTA701E
Revision No : 1
-240
I =-2.0mA
-200
C
B
I =-1.5mA
B
-160
-120
-80
-40
COLLECTOR CURRENT I (mA)
0
0
-1 -2 -3 -4 -5 -6 -7
COLLECTOR-EMITTER VOLTAGE V (V)
-1
-0.5
-0.3
I - V
CEC
COMMON EMITTER
Ta=25 C
I =-1.0mA
B
I =-0.5mA
B
I =-0.2mA
B
I =0mA
B
V - I
CE(sat) C
CE
COMMON EMITTER
I /I =10
B
C
3k
FE
1k
500
300
100
DC CURRENT GAIN h
50
30
COLLECTOR CURRENT I (mA)
-10
-5
-3
h - I
FE
Ta=100 CTa=100 C
Ta=25 C
Ta=-25 CTa=-25 C
-3-1-0.3-0.1
V - I
BE(sat)
C
COMMON EMITTER
V =-6VV =-6V
CE
V =-1VV =-1V
CE
-10 -30 -100 -300
CC
C
COMMON EMITTER
I /I =10
C
B
Ta=25 C
CE(sat)
-0.1
-0.05
-0.03
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATION
-0.01
-0.3 -1 -3 -10 -30 -100 -300
-0.1
COLLECTOR CURRENT I (mA)
f - I
T
3k
T
1k
500
300
100
50
30
Ta=100 C
Ta=25 C
Ta=-25 C
C
C
COMMON EMITTER
V =-10V
CE
Ta=25 C
BE(sat)
-1
-0.5
-0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
-0.1
-0.3 -1 -10 -30 -100 -300-3
-0.1
COLLECTOR CURRENT I (mA)
-1k
COMMON EMITTER
-300
-100
B
V =-6V
CE
-30
-10
-3
BASE CURRENT I (ยตA)
-1
I - V
BBE
Ta=25 C
Ta=100 C
Ta=-25 C
C
TRANSITION FREQUENCY f (MHz)
10
-0.1
-0.3 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT I (mA)
C
-0.3
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
0
BASE-EMITTER VOLTAGE V (V)
BE
Loading...