KEC KTA1862L, KTA1862D Datasheet

2003. 3. 27 1/3

SEMICONDUCTOR

TECHNICAL DATA

KTA1862D/L

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 4

HIGH VOLTAGE SWITCHING.

POWER SUPPLY SWITCHING FOR TELEPHONES.

FEATURES

High Breakdown Voltage, Typically : BV

CEO

=-400V.

Low Collector Saturation Voltage.

: V

CE(sat)

=-0.5V(Max.) at (IC=0.5A)

High Switching Speed, Typically

: t

f

= 0.4 S at IC=-1A

Wide Safe Operating Area (SOA)

MAXIMUM RATING (Ta=25 )

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note : hFE(1) Classification O:56~120, Y:82~180.

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

-400 V

Collector-Emitter Voltage

V

CEO

-400 V

Emitter-Base Voltag

V

EBO

-7 V

Collector Current

DC

I

C

-2.0 A

Pulse

I

CP

-4.0

Collector Power

Dissipation

Ta=25

P

C

1.0 W

Tc=25

10

Junction Temperature

T

j

150

Storage Temperature Range

T

stg

-55 150

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut of Current

I

CBO

VCB=-400V

- - -1.0

A

Emitter Cut of Current

I

EBO

VEB=-5V

- - -1.0

A

Collector-Base Breakdown Voltage

BV

CBO

IC=-50 A

-400 - - V

Collector-Emitter Breakdown Voltage

BV

CEO

IC=-1mA

-400 - - V

Emitter-Base Breakdown Voltage

BV

EBO

IE=-50 A

-7 - - V

DC Current Gain

hFE(1) Note VCE=-5V, IC=-100mA

56 100 180

hFE(2) VCE=-5V, IC=-500mA

6 - -

Collector-Emitter Saturation Voltage

V

CE(sat)

IC=-500mA, IB=-100mA

- -0.3 -0.5 V

Base-Emitter Saturation Voltage

V

BE(sat)

IC=-500mA, IB=-100mA

- - -1.2 V

Transition Frequency

f

T

VCE=-10V, IE=-100mA, f=5MHz

- 18 - MHz

Collector Output Capacitance

C

ob

VCB=-10V, IE=0mA, f=1MHz

- 30 - pF

Switching Time

Turn-on Time

t

on

- 0.2 -

S

Turn-off Time

t

stg

- -1.8 -

Storage Time

t

f

- 0.4 -

A

C

Q

H

F

123

1. BASE

2. COLLECTOR

3. EMITTER

Q

H

G

123

1. BASE

2. COLLECTOR

3. EMITTER

K

F

A C

F

F

I

J

D

B

M

E

P

DIM MILLIMETERS

A

B

C

D

E F

H

I

O

J

K

L

L

6.60 0.2

6.10 0.2

5.0 0.2

1.10 0.2

2.70 0.2

2.30 0.1

1.00 MAX

2.30 0.2

0.5 0.1

2.00 0.20

0.50 0.10 _

+

0.91 0.10M

0.90 0.1O _

+

1.00 0.10P

0.95 MAXQ

_

+ _

+

_

+

_

+ _

+ _

+

_

+

_

+ _

+ _

+

_

+

DPAK

I

J

D

B

K

E

P

L

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K 2.0 0.2

L

P

Q

6.60 0.2

6.10 0.2

5.0 0.2

1.10 0.2

9.50 0.6

2.30 0.1

0.76 0.1

1.0 MAX

2.30 0.2

0.5 0.1

0.50 0.1

1.0 0.1

0.90 MAX

_

+ _

+

_

+

_

+ _

+ _

+ _

+

_

+

_

+ _

+

_

+

_

+

I

0

I

B1

20µsec

-I =I =0.2A

B2

B1

DUTY CYCLE

B2

<

1%

=

INPUT

I

B2

I

B1

OUTPUT

150Ω

V =-150V

CC

IPAK

2003. 3. 27 2/3

KTA1862D/L

Revision No : 4

K

I - V

-0.5

Ta=25 C

-0.4

C

-0.3

-0.2

-0.1

COLLECTOR CURRENT I (A)

0

0

-2 -4 -6 -8 -10

COLLECTOR-EMITTER VOLTAGE V (V)

I - V

-5

Ta=25 C V =-5V

CE

-1

C

-0.3

-0.1

-0.03

-0.01

-0.003

COLLECTOR CURRENT I (A)

-0.001 0

-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4

BASE-EMITTER VOLTAGE V (V)

CEC

I =-0.5mA

CBE

BE

-5.0mA

-4.5mA

-4.0mA

-3.5mA

-3.0mA

-2.5mA

-2.0mA

-1.5mA

-1.0mA

B

CE

h - I

FE C

1K

300

FE

100

30

10

DC CURRENT GAIN h

3

1

-0.001

-0.01 -0.1 -1 -3

COLLECTOR CURRENT I (A)

r - t

th

CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SIGLE NONREPETITIVE PULSE)

1 INFINITE HEAT SINK 2 NO HEAT SINK

100

10

th

r ( C/W)

1

0.1

TRANSIENT THERMAL RESISTANCE

0.001

PULSE WIDTH t (sec)

w

10.10.01 10

w

Ta=25 C

V =-5V

CE

C

100 1K

2

1

SAFE OPERATING AREA

P - Ta

C

12

C

10

8

Tc=25 C

6

4

2

COLLECTOR DISSIPATION P (W)

0

25 50 75 100 125 150

0

Ta=25 C

AMBIENT TEMPERATURE Ta ( C)

-10

I MAX(PULSE)

C

-3

I MAX(DC)

C

C

-1

D

C OPERATION

Tc=25 C

-0.3

-0.1

SINGLE NONREPETITIVE

*

COLLECTOR CURRENT I (A)

-0.03

PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE

-0.01

-1 -3 -10 -1

COLLECTOR-EMITTER VOLTAGE V (V)

*

10mS*

1

00mS

*

-30 -100 -300

CE

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