KEC KTA1668 Datasheet
SEMICONDUCTOR
KTA1668
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
FEATURES
ᴌHigh Voltage : V
ᴌHigh Current : I
ᴌHigh Transition Frequency : f
ᴌWide Area of Safe Operation.
ᴌComplementary to KTC4378.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
P
* : Package mounted on ceramic substrate (250mm2x0.8t)
C
=-60V(Min.).
CEO
(Max.)=-1A.
C
=150MHz (Typ.).
T
DC
Pulse
V
V
V
I
P
PC *
T
CBO
CEO
EBO
I
C
CP
C
T
stg
j
-80 V
-60 V
-5 V
-1
-2
500 mW
1 W
150
-55ᴕ150
ᴱ
ᴱ
EPITAXIAL PLANAR PNP TRANSISTOR
A
H
J
D
FF
123
D
K
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
A
B
E
SOT-89
C
G
DIM
MILLIMETERS
A
4.70 MAX
_
B
C
D
E
F
G
H
J
K
+
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
+
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
Marking
h Rank
FE
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Note : hFE(1) Classification O:60ᴕ120, Y:100ᴕ200
I
I
hFE(1) VCE=-2V, IC=-50mA
hFE(2) VCE=-2V, IC=-1A
V
(BR)CEO
V
CE(sat)
V
BE(sat)
C
CBO
EBO
f
Type Name
VCB=-50V, IE=0
VEB=-4V, IC=0
J
- - -100 nA
- - -100 nA
60 - 200
30 - -
IC=-1mA, IB=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
T
ob
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz
-60 - - V
- -0.2 -0.7 V
- -0.85 -1.2 V
- 150 - MHz
- 12 - pF
1999. 12. 22 1/3
Revision No : 2
KTA1668
I - V
C
-1000
I =-10mA
-800
C
B
-600
-400
-200
COLLECTOR CURRENT I (mA)
0
0
-2 -4 -6
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
FE
1K
500
FE
300
V =-2V
CE
100
50
30
DC CURRENT GAIN h
10
-1 -3 -1K -5K
COLLECTOR CURRENT I (mA)
CE
I =-8mA
B
I =-6mA
B
I =0mA
B
C
COMMON EMITTER
Ta=25 C
-100-10 -30 -300
-8
C
I =-4mA
B
I =-3mA
B
I =-2mA
B
I =-1mA
B
-10 -12
CE
I - V
C
-1000
mA
A
=-30
-800
C
=-50m
B
I
B
I
-600
-400
-200
COLLECTOR CURRENT I (mA)
0
0
-0.2
COLLECTOR-EMITTER VOLTAGE V (V)
C - V
ob CB
100
50
30
ob
C (pF)
10
5
3
COLLECTOR OUTPUT CAPACITANCE
-1
-3 -5 -10 -30 -50 -100
COLLECTOR-BASE VOLTAGE V (V)
CE
I =-20mA
B
I =-10mA
B
I =-6mA
B
I =-4mA
B
I =-2mA
B
I =0mA
B
-1.0-0.4 -0.6
-0.8
CE
COMMON EMITTER
f=1MHz
Ta=25 C
CB
-1.2
f - I
C
T
300
T
COMMON EMITTER
Ta=25 C
V =-10V
CE
-1.0
COMMON EMITTER
Ta=25 C
-0.5
-0.3
V - I
CE(sat) C
100
CE(sat)
50
30
TRANSITION FREQUENCY f (MHz)
10
-1 -3 -10 -100
COLLECTOR CURRENT I (mA)
1999. 12. 22 2/3
Revision No : 2
C
-300-30
-0.1
=10
-0.05
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
-10-1
-3 -1K-100-30 -300 -5K
B
/I
C
I
COLLECTOR CURRENT I (mA)
C
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