KEC KTA1520S Datasheet
2002. 11. 7 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1073T
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH VOLTAGE CONTROL APPLICATIONS.
PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS.
CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.
FEATURES
High Voltage : V
CBO
=-300V, V
CEO
=-300V
Low Saturation Voltage : V
CE(sat)
=-0.5V(Max.)
Small Collector Output Capacitance : Cob=5.5pF(Typ.)
Complementary to KTC3207T.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-300 V
Collector-Emitter Voltage
V
CEO
-300 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-100 mA
Base Current
I
B
-20 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-300V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-0.1mA, IE=0
-300 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA, IB=0
-300 - - V
DC Current Gain
hFE(1) VCE=-10V, IC=-1mA
30 - -
hFE(2) (Note) VCE=-10V, IC=-20mA
50 - 200
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-20mA, IB=-2mA
- - -0.5 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-20mA, IB=-2mA
- - -1.2 V
Transition Frequency
f
T
VCE=-10V, IC=-20mA
50 55 - MHz
Collector Output Capacitance
C
ob
VCB=-20V, IE=0, f=1MHz
- 5.5 6.0 pF
Note : hFE(1) Classification O:50 150, Y:100~200
* Package mounted on a ceramic board (600 0.8 )
E
B
A
F
C
K
G
G
L
J
1. EMITTER
2. BASE
3. COLLECTOR
2
1
3
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TSM
Marking
h Rank
FE
Lot No.
Type Name
S X
2002. 11. 7 2/3
KTA1073T
Revision No : 1
I - V (LOW VOLTAGE REGION)
CCE
-100
-10mA
-80
C
-5mA
-3mA
-2mA
-60
-40
-20
COLLECTOR CURRENT I (mA)
0
0
-2 -4 -6 -8 -10
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
CFE
300
FE
100
50
30
10
DC CURRENT GAIN h
COMMON EMITTER
5
Ta=-25 C
-0.13-0.3 -1 -3 -10 -30 -100
-1mA
-0.8mA
-0.6mA
-0.3mA
-0.2mA
-0.1mA
I =0mA
B
CE
V =-10V
CE
-1V
-0.4mA
-5V
I - V (LOW CURRENT REGION)
CCE
-10
-8
C
-80µA
-6
-4
-2
COLLECTOR CURRENT I (mA)
0
0
-40 -80 -120 -160 -200
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
500
COMMON
300
100
50
30
10
EMITTER
V =-10V
CE
Ta=100 C
Ta=25 C
Ta=-55 C
-0.1
-0.3 -1 -3 -10 -30 -100
FE
DC CURRENT GAIN h
-70µA
-60µA
-50µA
-40µA
-30µA
-20µA
-10µA
I =0µA
B
CE
CFE
COLLECTOR CURRENT I (mA)
V - I
CE(sat)
-3
COMMON EMITTER
I /I =10
B
C
-1
-0.5
CE(sat)
-0.3
a=100 C
a=25 C
T
T
-0.1
VOLTAGE V (V)
-0.05
-0.03
COLLECTOR-EMITTER SATURATION
-0.3 -1 -3 -10 -30 -100
-0.1
COLLECTOR CURRENT I (mA)
C
C
Ta=-55 C
C
COLLECTOR CURRENT I (mA)
V - I
-5
-3
-1
BE(sat)
-0.5
-0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
-0.1
-0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I (mA)
BE(sat) C
Ta=-55 C
=25 C
a
T
C
Ta=100 C
C
COMMON
EMITTER
I /I =10
B
C
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