KEC KTA1385L, KTA1385D Datasheet
2003. 3. 27 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1385D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : PC=1.3W(Ta=25 )
Complementary to KTC5103D/L
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse test : PW 350 S, Duty Cycle 2% Pulse
Note) h
FE
(2) Classification : O:160 320, Y:200 400.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-60 V
Collector-Emitter Voltage
V
CEO
-60 V
Emitter-Base Voltage
V
EBO
-7 V
Collector Current
DC
I
C
-5
A
Pulse *
I
CP
-8
Base Current
I
B
-1 A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
15
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -10
A
Emitter Cut-off Current
I
EBO
VEB=-7V, IC=0
- - -10
A
DC Current Gain *
h
FE
1 VCE=-1V, IC=-0.1A
60 - -
hFE2 (Note) VCE=-1V, IC=-2A
160 - 400
h
FE
3 VCE=-2V, IC=-5A
50 - -
Collector-Emitter Saturation Voltage *
V
CE(sat)
IC=-2A, IB=-0.2A
- -0.14 -0.3 V
Base-Emitter Saturation Voltage *
V
BE(sat)
IC=-2A, IB=-0.2A
- -0.9 -1.2 V
Switching
Time
Turn On Time
t
on
- 0.15 1
S
Storage Time
t
stg
- 0.78 2.5
Fall Time
t
f
- 0.18 1
* PW 10ms, Duty Cycle 50%
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
A
C
K
F
D
B
E
I
M
P
DPAK
J
O
L
DIM MILLIMETERS
A
B
C
D
E
F
H
I
J
K
L
6.60 0.2
6.10 0.2
_
+
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
_
+
_
+
_
+
_
+
_
+
_
+
_
+
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
6.60 0.2
6.10 0.2
_
+
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
_
+
0.5 0.1
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
Q
H
G
A
C
F
F
123
0
I
B1
20µsec
-I =I =0.2A
B2
B1
DUTY CYCLE
<
=
I
B2
1%
INPUT
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
OUTPUT
I
B1
I
B2
V =-10V
CC
5Ω
2003. 3. 27 2/3
KTA1385D/L
Revision No : 3
Pc - Ta
25
20
C
15
10
Tc=25 C
5
POWER DISSIPATION P (W)
0
0
Ta=25 C
50 100 150 200 250
AMBIENT TEMPERATURE Ta ( C)
SAFE OPERATING AREA
-10
I (Pulse)MAX.*
C
-5
I MAX.
C
C
-3
-1
-0.5
* SINGLE NONREPETIVE
-0.3
PULSED Tc=25 C
CURVES MUST BE DERATED
COLLECTOR CURRENT I (A)
LINERLY WITH INCREASE
IN TEMPERATURE
-0.1
-1 -3 -10
COLLECTOR-EMITTER VOLTAGE V (V)
10mS*
200mS*
Dissipation Limited
S/b Limited
-5 -50
2mS*
-30
CE
CEO
V MAX.
-100
d - T
160
140
120
T
100
80
S/b Limited
Dissipation Limited
60
40
C
I DERATING d (%)
20
0
0
50
25 75 125 175
CASE TEMPERATURE Tc ( C)
REVERSE BIAS
SAFE OPERATING AREA
-10
C
-8
-6
-4
-2
COLLECTOR CURRENT I (A)
0
-20
COLLECTOR-EMITTER VOLTAGE V (V)
TC
CEO
V (SUS)
200100 150
-80-40 -60 -100
CE
-10
I - V
CEC
1k
h - I
FE
C
500
-8
C
-6
B
-4
I =-200mA
B
I =-150mA
B
I =-100mA
B
I =-80mA
I =-60mA
B
I =-40mA
B
I =-30mA
B
I =-20mA
B
300
FE
100
50
30
V =-2V
V =-1V
CE
CE
10
I =-10mA
-2
COLLECTOR CURRENT I (A)
-1.2 -1.6 -2.0
-1.2-0.8-0.40
COLLECTOR-EMITTER VOLTAGE V (V)
B
I =0mA
B
CE
5
3
DC CURRENT GAIN h
1
-0.01
-0.03 -0.1 -0.3 -1 -3 -10
COLLECTOR CURRENT I (A)
C
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