KEC KTA1381 Datasheet
2003. 7. 24 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTA1381
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
HIGH-DEFINITION CRT DISPLAY,
VIDEO OUTPUT APPLICATIONS.
FEATURES
High breakdown voltage : V
CEO
300V.
Small reverse transfer capacitance and
excellent high frequency characteristic.
: C
re
=2.3pF (VCB=30V, f=1MHz)
Complementary KTC3503.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFEClassification O:60 120, Y:100 200
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-300 V
Collector-Emitter Voltage
V
CEO
-300 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
DC
I
C
-100
mA
Pulse
I
CP
-200
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
7
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-200V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-4V, IC=0
- - -0.1
A
DC Current Gain
h
FE
(Note) VCE=-10V, IC=-10mA
60 - 200
Transition Frequency
f
T
VCE=-30V, IC=-10mA
- 150 - MHz
Collector Output Capacitance
C
ob
VCB=-30V, IE=0, f=1MHz
- 3.1 - pF
Reverse Transfer Capacitance
C
re
VCB=-30V, IE=0, f=1MHz
- 2.3 - pF
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-20mA, IB=-2mA
- - -0.6 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=-20mA, IB=-2mA
- - -1.0 V
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-10 A, IE=0
-300 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA, IB=0
-300 - - V
Base-Emitter Breakdown Voltage
V
(BR)EBO
IE=-10 A, IC=0
-5 - - V
A
B
C
H
J
K
M
N
1
23
D
E
F
G
L
O
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
+
Φ3.2 0.1
3.5
_
+
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
+
0.75 0.15
_
+
15.50 0.5
_
+
2.3 0.1
_
+
0.65 0.15
1.6
3.4 MAX
TO-126
2003. 7. 24 2/3
KTA1381
Revision No : 3
-20
-16
C
-12
-8
-4
COLLECTOR CURRENT I (mA)
0
0
-2 -4
COLLECTOR-EMITTER VOLTAGE V (V)
-120
V =-10V
CE
-100
C
-80
-60
-40
-20
COLLECTOR CURRENT I (mA)
0
0 -0.2
I - V
CCE
I =-140µA
B
I =-120µA
B
I =-100µA
B
I =-80µA
B
I =-60µA
B
I =-40µA
B
I =-20µA
B
I =0
B
I - V
C
BE
-6
=75 C
a
T
Ta=25 C
Ta=-25 C
-0.8-0.4 -0.6
I - V
C CE
-10
I =-60µA
B
I =-50µA
-8
C
-6
-4
-2
COLLECTOR CURRENT I (mA)
-8
CE
-10
0
0-2
COLLECTOR-EMITTER VOLTAGE V (V)
500
300
FE
100
Ta=75 C
Ta=25 C
Ta=-25 C
B
I =-40µA
B
I =-30µA
B
I =-20µA
B
I =-10µA
B
I =0
B
-4
h - I
FE
-6
C
-8
CE
V =-10V
CE
-10
50
30
DC CURRENT GAIN h
10
-1.0
-100-30-10-3-1-0.5
BASE-EMITTER VOLTAGE V (V)
f - I
T
500
300
T
100
30
10
TRANSITION FREQUENCY f (MHz)
-0.550-1 -3 -10
COLLECTOR CURRENT I (mA)
BE
C
COLLECTOR CURRENT I (mA)
C - V
Ob CB
C
50
V =-30V
CE
30
ob
f =1MHz
T
10
5
3
OUTPUT CAPACITANCE C (pF)
1
-0.5
-1
-10 -100
COLLECTOR BASE VOLTAGE V (V)
-30-3
CB
C
-30
-100
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